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Pro Electron: Component Designation System Tutorial

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PRO ELECTRON: COMPONENT DESIGNATION SYSTEM

The Association Internationale Pro Electron is the European type designation and registration system for active components (semiconductors, sensor devices, and cathode ray tubes, etc.). The part numbering system provides a concise and unambiguous type designation to the components.

The system administered by Pro Electron is described below.

A basic type number consists of two letters followed by a serial number

1 MATERIAL

The first letter indicates the semiconductor material used in the device:

  • Germanium or other material with a band gap of 0.6-1.0 eV
  • Silicon or other material with a band gap of 1.0-1.3 eV
  • Gallium-arsenide or other material with a band gap of more than 1.3 eV
  • Ceramic
  • Compound materials such as cadmium- sulphide .

2 FUNCTION

The second letter indicates the general function of the device:

Second Letter

Device

Function

A

Diode

Signal, Low Power

B

Diode

Variable Capacitance

C

Transistor

Low power, Audio frequency

D

Transistor

Power, Audio frequency

E

Diode

Tunnel

F

Transistor

Low Power, Radio Frequency

G

Multiple Devices

Miscellaneous Devices

H

Diode

Magnetic Device

K

Capacitor

L

Transistor

Power, Radio Frequency

M

Mixer

N

Photocoupler

P

Radiation sensitive device

e.g. Photodiode, phototransistor

Photoconductive cell, or

Radiation detector diode

Q

Radiation generating device

Light Emitting Diode, Laser

R

Control and Switching Device

Low Power

e.g. Thyristors , Diacs , Triacs

S

Transistor

Low power, Switching

T

Controlling and Switching Device

Power

e.g. Thyristors , Triacs

U

Transistor

Power, switching

V

Antennas

W

Surface acoustic wave device

X

Diode

Multiplier (e.g. Varactor , step recovery )

Y

Diode

Rectifier, Booster, or efficiency diode

Z

Diode

Voltage reference or voltage regulator,

Transient suppressor diode

3 SERIAL NUMBER

The remainder of the type number is a serial number , which lies in one of the following two groups:

  • Devices intended primarily for use in consumer applications such as radio and T.V. receivers, audio amplifiers, domestic appliances, etc. The serial number consists of three or four numbers.
  • Devices intended mainly for applications such as industrial, professional, and transmitting equipments. The serial number consists of one letter (Z, Y, X, W, etc.) followed by two or three numbers.

4 RANGE NUMBERS

Whenever there is a range of variants of a basic type of a rectifier diode, thyristor or voltage regulating diode:-

  • The type number is often used to identify the range
  • Further letters and numbers are added after a hyphen to identify associated types within the range.

These additions are as follows:-

  • Voltage Reference Diodes and Voltage Regulator Diodes :
    One Letter and One Number, preceded by a hyphen
    The letter indicates the nominal percentage tolerance of the operating voltage V( z):-
    • A - 1%
    • B - 2%
    • C - 5%
    • D - 10%
    • E - 20%
    The number indicates the typical operating voltage, V( z), for each type at nominal operating current, I(z), rating of the range. The letter V is used to indicate a decimal sign.

    Example: BZY74-C6V3
  • Transient Voltage Suppressor Diodes:
    One Number, preceded by a hyphen
    The number indicates the maximum continuous reverse (stand-off) voltage V(R). Letter V is used to indicate the decimal point.

    Example: BZW70-9V1

    Letter B can be used immediately after the last number to indicate the bi-directional suppressor diodes

    Example: BZW10-15B
  • Conventional and Controlled Avalanche Rectifier Diodes and Thyristors :
    One Number, preceded by a hyphen.
    The number indicates the rated maximum repetitive peak reverse voltage, V( RRM), or the rated repetitive peak off-state voltage, V(DRM), whichever is lower. Reverse polarity with respect to case is indicated by a letter R, immediately after the number.

    Example: BTY80-100 or -100R
  • Radiation Detectors :
    One number , preceded by a hyphen
    The number indicates the depletion layer in µm. The resolution is indicated by a version letter .

    Example: BPX10-2A
  • Array of radiation detectors and generators :
    One Number, preceded by a stroke (/)
    The number indicates the no. of basic devices, assembled into the array.

    Examples: BPW50/6, BPW50/9
  • Radiation Generators:
    One number , preceded by a hyphen
    The number indicates the luminous intensity range in milli -candela (MCD).

    Example: CQY54-1
  • High frequency power transistors:
    One number , preceded by a hyphen
    The number indicates the supply voltage.

    Example: BLU80-24

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