| @Temp (øC) (Test Condition): | 25 |
| g(fs) Min. (S) Trans. conduct.: | 25m |
| @V(DD) (V) (Test Condition): | 5.0 |
| P(D) Max. (W): | 240m |
| @I(D) (A) (Test Condition): | 10m |
| I(D) Max. (A): | 80m |
| @Freq. (Hz) (Test Condition): | 1.75G |
| @V(DS) (V) (Test Condition): | 5.0 |
| @I(D) (A) (Test Condition): | 10m |
| I(DSS) Max. (A): | 60m |
| V(GS)off Max. (V): | 2.5 |
| @Freq. (Hz) (Test Condition): | 1.7G |
| I(DSS) Min. (A): | 6.0m |
| @I(D) (A) (Test Condition): | 10m |
| @V(DS) (V) (Test Condition): | 5.0 |
| @V(DS) (V) (Test Condition): | 3.0 |
| @V(DS) (V) (Test Condition): | 5.0 |
| Power Gain Min. (dB): | 17Â |
| V(BR)GSS (V): | 6.0 |
| V(BR)DSS (V): | 10 |
| Semiconductor Material: | GaAs |
| Noise Figure Min. (dB): | 1.8Â |
| Maximum Operating Temp (øC): | 150õ |
