Part Number: IRF9610
| Internal ID | 85045
|
| Quantity in Stock: | 2
|
| Manufacturer: | IR
|
| Description: | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A TRANSISTOR
|
| Category: |
Price Per Quantity
| @I(D) (A) (Test Condition): | .9 |
| @Temp (øC) (Test Condition): | 125õ |
| g(fs) Min. (S) Trans. conduct.: | .9 |
| @I(D) (A) (Test Condition): | .9 |
| @V(DS) (V) (Test Condition): | 25 |
| @Temp (øC): | 100# |
| Mounting Style: | T |
| I(D) Max. (A): | 1.8 |
| Package Style: | TO-220AB |
| Military/High-Rel: | N |
| I(DSS) Max. (A): | 500u |
| r(DS)on Max. (Ohms): | 3.0 |
| t(d)off Max. (s) Off time: | 10n |
| I(DM) Max. (A) Pulsed I(D): | 1.0 |
| V(GS)th (V) (Min): | 2.0 |
| @I(D) (A) (Test Condition): | 250u |
| @Freq. (Hz) (Test Condition): | 1.0M |
| @V(DS) (V) (Test Condition): | 160 |
| t(r) Max. (s) Rise time: | 15n |
| C(iss) Max. (F): | 170p |
| @V(DS) (V) (Test Condition): | 50 |
| t(f) Max. (s) Fall time.: | 8.0n |
| V(GS)th Max. (V): | 4.0 |
| @V(GS) (V) (Test Condition): | 20 |
| I(GSS) Max. (A): | 100n |
| I(GSS) Max. (A): | ¦ |
| Thermal Resistance Junc-Amb.: | 62 |
| Absolute Max. Power Diss. (W): | 20 |
| V(BR)DSS (V): | 200 |
| @V(GS) (V) (Test Condition): | 10 |
| td(on) Max (s) On time delay: | 8.0n |
| Thermal Resistance Junc-Case: | 6.4 |
| Maximum Operating Temp (øC): | 150õ |
| Minimum Operating Temp (øC): | -55õ |
