Part Number: IRFBC30

| Internal ID | 85062
|
| Quantity in Stock: | 3
|
| Manufacturer: | IR
|
| Description: | N-Channel Enhancement MOSFET TRANS.TO-220
|
| Category: |
Price Per Quantity
| @V(DS) (V) (Test Condition): | 600 |
| td(on) Max (s) On time delay: | 17n |
| @V(GS) (V) (Test Condition): | 20 |
| @V(DS) (V) (Test Condition): | 25 |
| Thermal Resistance Junc-Case: | 1.7 |
| Thermal Resistance Junc-Amb.: | 80 |
| V(BR)DSS (V): | 600 |
| g(fs) Max; (S) Trans. conduct;: | 3.6Â |
| g(fs) Min. (S) Trans. conduct.: | 2.4 |
| V(BR)GSS (V): | 20 |
| r(DS)on Max. (Ohms): | 2.2 |
| Minimum Operating Temp (øC): | -55õ |
| C(iss) Max. (F): | 630p |
| @V(GS) (V) (Test Condition): | 10 |
| @V(GS) (V) (Test Condition): | 0.0 |
| @Freq. (Hz) (Test Condition): | 1.0M |
| I(D) Max. (A): | 3.6 |
| I(DSS) Max. (A): | 250u |
| t(d)off Max. (s) Off time: | 53n |
| I(GSS) Max. (A): | 500n |
| I(DM) Max. (A) Pulsed I(D): | 2.3 |
| @I(D) (A) (Test Condition): | 2.0 |
| @Temp (øC): | 100 |
| IDM Max (@25øC Amb): | 14 |
| @Pulse Width (s) (Condition): | 10u |
| @V(DS) (V) (Test Condition): | 100 |

