Military/High-Rel: | N |
Number of Devices: | 1 |
V(BR)CEO (V): | 24 |
I(C) Max. (A): | 50m |
P(D) Max. (W): | 750m |
Minimum Operating Temp (øC): | -40 |
Maximum Operating Temp (øC): | 85 |
h(FE) Min. Current gain.: | 40 |
@I(C) (A) (Test Condition): | 1.0m |
@V(CE) (V) (Test Condition): | 3.0 |
Package Style: | DIP |
Mounting Style: | T |
— | |
Description: | VBE matched +/-5mV |
Price: $6.98
Quantity: 0
-
Out of stockQuantity: 0
-
Sale!Quantity: 16mc74hc245a is on sale at our online store for 0.61985. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
-
Quantity: 15
f(T) Min. (Hz) Transition Freq: 200M @V(CE) (V) (Test Condition): 1.0 Military/High-Rel: N V(BR)CEO (V): 45 Package Style: TO-116 Description: Memory Driver XSTRs @I(C) (A) (Test Condition): 500m @I(C) (A) (Test Condition): ì I(C) Max. (A): 1.5 Mounting Style: T h(FE) Min. Current gain.: 30 P(D) Max. (W): 2.5 Number of Devices: 4 -
Out of stockQuantity: 0
f(T) Min. (Hz) Transition Freq: 400MÂ @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 30 Package Style: TO-116 Description: Complementary;VCBO 60V @I(C) (A) (Test Condition): 1.0m @I(C) (A) (Test Condition): ì I(C) Max. (A): 500m Mounting Style: T h(FE) Min. Current gain.: 25 P(D) Max. (W): 1.9 Number of Devices: 4 -
Out of stockQuantity: 0MPQ2222A is on sale at our online store for 7.75. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
-
Quantity: 680
Maximum Operating Temp (øC): 150õ f(T) Min. (Hz) Transition Freq: 450M Minimum Operating Temp (øC): -65õ @I(C) (A) (Test Condition): 10m Semiconductor Material: Silicon @V(CE) (V) (Test Condition): 1.0 V(BR)CBO (V): 40 Military/High-Rel: N V(BR)CEO (V): 15 @V(CE) (V) (Test Condition): 10 Package Style: TO-116 Emitter-Base Diode (Y/N): No @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): § Type (NPN/PNP): NPN I(C) Max. (A): 500m @V(CBO) (V) (Test Condition): 20 I(CBO) Max. (A): 400n Mounting Style: T h(FE) Min. Current gain.: 40 P(D) Max. (W): 1.5 Number of Devices: 4 -
Quantity: 242
Maximum Operating Temp (øC): 150õ f(T) Min. (Hz) Transition Freq: 200M Minimum Operating Temp (øC): -65õ @I(C) (A) (Test Condition): 50m Semiconductor Material: Silicon @V(CE) (V) (Test Condition): 10 V(BR)CBO (V): 60 Military/High-Rel: N V(BR)CEO (V): 40 @V(CE) (V) (Test Condition): 20 Package Style: TO-116 @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): Ã Type (NPN/PNP): PNP I(C) Max. (A): 600m @V(CBO) (V) (Test Condition): 30 I(CBO) Max. (A): 50n Mounting Style: T h(FE) Min. Current gain.: 35 P(D) Max. (W): 2.0 Number of Devices: 4 -
Quantity: 64
Military/High-Rel: N Number of Devices: 4 Type (NPN/PNP): PNP V(BR)CEO (V): 40 V(BR)CBO (V): 60 I(C) Max. (A): 600m P(D) Max. (W): 2.0 Minimum Operating Temp (øC): -65õ Maximum Operating Temp (øC): 150õ h(FE) Min. Current gain.: 50 @I(C) (A) (Test Condition): 300m @V(CE) (V) (Test Condition): 10 f(T) Min. (Hz) Transition Freq: 200M @I(C) (A) (Test Condition): 50m @V(CE) (V) (Test Condition): 20 Semiconductor Material: Silicon Package Style: TO-116 Mounting Style: T Pulsed Measurement Ä -
Out of stockQuantity: 0mpq2907a is on sale at our online store for 8.8297. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
-
Quantity: 170
Military/High-Rel: N Number of Devices: 4 V(BR)CEO (V): 40 I(C) Max. (A): 1.0 P(D) Max. (W): 1.5 h(FE) Min. Current gain.: 20 @I(C) (A) (Test Condition): 500m @V(CE) (V) (Test Condition): 1.0 f(T) Min. (Hz) Transition Freq: 125M Package Style: TO-116 Mounting Style: T BVCES or Punch through º Description: Memory Driver XSTRs -
Out of stockQuantity: 0
f(T) Min. (Hz) Transition Freq: 600M @V(CE) (V) (Test Condition): 1.0 V(BR)CEO (V): 12 Description: VCBO 15Vdc;VEBO 4.5Vdc @I(C) (A) (Test Condition): 10m I(C) Max. (A): 200m h(FE) Min. Current gain.: 30 Number of Devices: 4 -
Out of stockQuantity: 0
h(FE) Min. Current gain.: 30 @I(C) (A) (Test Condition): 1 Number of Devices: 4 Mounting Style: T @V(CE) (V) (Test Condition): 5 Package Style: TO-116 Military/High-Rel: N Semiconductor Material: Silicon @I(C) (A) (Test Condition): 50 Type (NPN/PNP): NPN @V(CBO) (V) (Test Condition): 40 f(T) Min. (Hz) Transition Freq: 300M V(BR)CEO (V): 36 I(C) Max. (A): 1 Description: 0.75V VCEsat max I(CBO) Max. (A): 1.7u -
Out of stockQuantity: 0mpq3725 is on sale at our online store for 4.09. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
-
Out of stockQuantity: 0
f(T) Min. (Hz) Transition Freq: 150M @V(CE) (V) (Test Condition): 1.0 Military/High-Rel: N V(BR)CEO (V): 40 Package Style: TO-116 Description: Memory Driver XSTRs @I(C) (A) (Test Condition): 150m @I(C) (A) (Test Condition): Á I(C) Max. (A): 1.5 Mounting Style: T h(FE) Min. Current gain.: 35 P(D) Max. (W): 1.7 Number of Devices: 4 -
Quantity: 24156
Military/High-Rel: N Number of Devices: 4 V(BR)CEO (V): 40 I(C) Max. (A): 200m P(D) Max. (W): 900m h(FE) Min. Current gain.: 60 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 1.0 f(T) Min. (Hz) Transition Freq: 200M Package Style: TO-116 Mounting Style: T @ above 125øC ¥ Description: VCBO 40Vdc;VEBO 5.0Vdc -
Quantity: 2547
f(T) Min. (Hz) Transition Freq: 200M @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 30 Package Style: DIP Description: Complementary;VCBO 60V @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): ê I(C) Max. (A): 500m Mounting Style: T h(FE) Min. Current gain.: 75 P(D) Max. (W): 1.2 Number of Devices: 4 -
Out of stockQuantity: 0
Military/High-Rel: N Number of Devices: 4 V(BR)CEO (V): 40 V(BR)CBO (V): 40 I(C) Max. (A): 200m P(D) Max. (W): 900m h(FE) Min. Current gain.: 50 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 1.0 f(T) Min. (Hz) Transition Freq: 200M @I(C) (A) (Test Condition): 10m Package Style: TO-116 Mounting Style: T Description: Complementary;VCBO 40V -
Quantity: 895
f(T) Min. (Hz) Transition Freq: 50M @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 200 Package Style: TO-116 Description: VCBO 200Vdc;VEBO 5Vdc @I(C) (A) (Test Condition): 1.0m @I(C) (A) (Test Condition): ¢ I(C) Max. (A): 500m Mounting Style: T h(FE) Min. Current gain.: 25 P(D) Max. (W): 1.7 Number of Devices: 4