| Maximum Operating Temp (øC): | 125õ |
| f(T) Min. (Hz) Transition Freq: | 7.0G |
| @I(C) (A) (Test Condition): | 20m |
| V(BR)CBO (V): | 20 |
| Military/High-Rel: | N |
| V(BR)CEO (V): | 12 |
| @Freq. (Hz) (Test Condition): | 1.0G |
| @I(C) (A) (Test Condition): | 5.0m |
| @V(CE) (V) (Test Condition): | 10 |
| Absolute Max. Power Diss. (W): | 150m |
| @I(C) (A) (Test Condition): | 20m |
| h(FE) Max. Current gain.: | 200 |
| Noise Figure Min. (dB): | 1.1 |
| @V(CE) (V) (Test Condition): | 10 |
| @V(CE) (V) (Test Condition): | 10 |
| Semiconductor Material: | Silicon |
| Package Style: | TO-236AA |
| I(C) Max. (A): | 80m |
| I(C) Max. (A): | Ý |
| Mounting Style: | S |
