| Military/High-Rel: | N |
| V(BR)CEO (V): | 60 |
| V(BR)CBO (V): | 60 |
| I(C) Max. (A): | 10 |
| Absolute Max. Power Diss. (W): | 90 |
| Maximum Operating Temp (øC): | 150õ |
| I(CBO) Max. (A): | 200u |
| @V(CBO) (V) (Test Condition): | 60 |
| h(FE) Min. Current gain.: | 1.0k |
| @I(C) (A) (Test Condition): | 3.0 |
| @V(CE) (V) (Test Condition): | 3.0 |
| f(T) Min. (Hz) Transition Freq: | 10M |
| @I(C) (A) (Test Condition): | 3.0 |
| @V(CE) (V) (Test Condition): | 3.0 |
| V(CE)sat Max. (V): | 2.5 |
| @I(C) (A) (Test Condition): | 8.0 |
| @I(B) (A) (Test Condition): | 80m |
| t(on) Max. (s) On time.: | 2.5u |
| t(off) Max. (s) Off time: | 10u |
| Semiconductor Material: | Silicon |
| Package Style: | TO-220AB |
| Mounting Style: | T |
| Not at Breakdown Voltage | ë |
| Description: | R1 = 8.0k; R2 = 100 ohm typ. C-E Diode. |
