| h(FE) Min. Current gain.: | 1.0k |
| t(off) Max. (s) Off time: | 2.0u |
| @I(C) (A) (Test Condition): | 5.0 |
| V(BR)CEO (V): | 60 |
| V(CE)sat Max. (V): | 2.0 |
| t(f) Max. (s) Fall time.: | 1.0u |
| @I(C) (A) (Test Condition): | 5.0 |
| @V(CE) (V) (Test Condition): | 4.0 |
| Absolute Max. Power Diss. (W): | 125# |
| Semiconductor Material: | Silicon |
| @I(C) (A) (Test Condition): | 5.0 |
| @V(CBO) (V) (Test Condition): | 60 |
| f(T) Min. (Hz) Transition Freq: | 100k |
| I(C) Max. (A): | 12 |
| t(on) Max. (s) On time.: | 500n |
| V(BR)CBO (V): | 60 |
| @I(B) (A) (Test Condition): | 20m |
| @V(CE) (V) (Test Condition): | 4.0 |
| I(CBO) Max. (A): | 400u |