| Military/High-Rel: | N |
| V(BR)CEO (V): | 80 |
| V(BR)CBO (V): | 100 |
| I(C) Max. (A): | 16 |
| Absolute Max. Power Diss. (W): | 200# |
| Maximum Operating Temp (øC): | 150õ |
| I(CBO) Max. (A): | 1.0m |
| @V(CBO) (V) (Test Condition): | 100 |
| h(FE) Min. Current gain.: | 1.0k |
| @I(C) (A) (Test Condition): | 10 |
| @V(CE) (V) (Test Condition): | 3.0 |
| f(T) Min. (Hz) Transition Freq: | 40MÂ |
| @I(C) (A) (Test Condition): | 5.0 |
| @V(CE) (V) (Test Condition): | 3.0 |
| V(CE)sat Max. (V): | 2.0 |
| @I(C) (A) (Test Condition): | 10 |
| @I(B) (A) (Test Condition): | 40m |
| t(on) Max. (s) On time.: | 1.0u |
| t(off) Max. (s) Off time: | 3.5u |
| Semiconductor Material: | Silicon |
| Package Style: | SOT-93 |
| Mounting Style: | T |
| In Volts RMS | £ |
| Description: | R1 = 3.0k; R2 = 80 ohm typ. C-E Diode. |