Part Number: IRF1010N
| Internal ID | 84930
|
| Quantity in Stock: | |
| Manufacturer: | IR
|
| Description: | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. TRANS.
|
| Category: |
Price Per Quantity
| @(VDS) (V) (Test Condition): | 20 |
| Maximum Operating Temp (øC): | 175õ |
| @V(DS) (V) (Test Condition): | 55 |
| td(on) Max (s) On time delay: | 13n |
| @V(GS) (V) (Test Condition): | 20 |
| @Temp (øC) (Test Condition): | 25õ |
| @V(DS) (V) (Test Condition): | 25 |
| Military/High-Rel: | N |
| t(f) Max. (s) Fall time.: | 60n |
| Thermal Resistance Junc-Case: | 1.3 |
| Thermal Resistance Junc-Amb.: | 62 |
| V(BR)DSS (V): | 55 |
| Absolute Max. Power Diss. (W): | 115# |
| g(fs) Min. (S) Trans. conduct.: | 31 |
| V(BR)GSS (V): | 20 |
| r(DS)on Max. (Ohms): | 12.5m |
| Minimum Operating Temp (øC): | -55õ |
| C(iss) Max. (F): | 2.8n |
| V(GS)th Max. (V): | 4.0 |
| @V(GS) (V) (Test Condition): | 10 |
| @V(GS) (V) (Test Condition): | 0.0 |
| @Freq. (Hz) (Test Condition): | 1.0M |
| V(GS)th (V) (Min): | 2.0 |
| I(D) Max. (A): | 68# |
| Package Style: | TO-220AB |
| @I(D) (A) (Test Condition): | 250u |
| I(DSS) Max. (A): | 25u |
| Mounting Style: | T |
| t(d)off Max. (s) Off time: | 46n |
| I(GSS) Max. (A): | 100n |
| @I(D) (A) (Test Condition): | 41 |
| t(r) Max. (s) Rise time: | 77n |
| I(DM) Max. (A) Pulsed I(D): | 48 |
| @I(D) (A) (Test Condition): | 41 |
| @Temp (øC): | 100# |
| IDM Max (@25øC Amb): | 270# |
| @V(DS) (V) (Test Condition): | 25 |
