Part Number: IRFI9Z14G

Internal ID | 85095
|
Quantity in Stock: | 34104
|
Manufacturer: | IR
|
Description: | P-Channel Enhancement MOSFET
|
Category: |
Price Per Quantity
@V(DS) (V) (Test Condition): | 48 |
td(on) Max (s) On time delay: | 11n |
@V(GS) (V) (Test Condition): | 20 |
@Temp (øC) (Test Condition): | 150õ |
@V(DS) (V) (Test Condition): | 25 |
t(f) Max. (s) Fall time.: | 31n |
Thermal Resistance Junc-Case: | 5.5 |
Thermal Resistance Junc-Amb.: | 65 |
V(BR)DSS (V): | 60 |
Absolute Max. Power Diss. (W): | 27 |
g(fs) Min. (S) Trans. conduct.: | 1.6 |
r(DS)on Max. (Ohms): | .50 |
Minimum Operating Temp (øC): | -55õ |
C(iss) Max. (F): | 270p |
V(GS)th Max. (V): | 4.0 |
@V(GS) (V) (Test Condition): | 10 |
@Freq. (Hz) (Test Condition): | 1M |
V(GS)th (V) (Min): | 2.0 |
I(D) Max. (A): | 5.3 |
@I(D) (A) (Test Condition): | 250u |
I(DSS) Max. (A): | 500u |
t(d)off Max. (s) Off time: | 9.6n |
I(GSS) Max. (A): | 100n |
@I(D) (A) (Test Condition): | 3.2 |
t(r) Max. (s) Rise time: | 63n |
I(DM) Max. (A) Pulsed I(D): | 3.8 |
@I(D) (A) (Test Condition): | 3.2 |
@Temp (øC): | 100# |
IDM Max (@25øC Amb): | 21 |
@V(DS) (V) (Test Condition): | 25 |