IRFI9Z14G

| Internal ID | 85095
|
| Quantity in Stock: | 28850
|
| Manufacturer: | IR
|
| Description: | P-Channel Enhancement MOSFET
|
| Category: |
Price Per Quantity
| @V(DS) (V) (Test Condition): | 48 |
| td(on) Max (s) On time delay: | 11n |
| @V(GS) (V) (Test Condition): | 20 |
| @Temp (øC) (Test Condition): | 150õ |
| @V(DS) (V) (Test Condition): | 25 |
| t(f) Max. (s) Fall time.: | 31n |
| Thermal Resistance Junc-Case: | 5.5 |
| Thermal Resistance Junc-Amb.: | 65 |
| V(BR)DSS (V): | 60 |
| Absolute Max. Power Diss. (W): | 27 |
| g(fs) Min. (S) Trans. conduct.: | 1.6 |
| r(DS)on Max. (Ohms): | .50 |
| Minimum Operating Temp (øC): | -55õ |
| C(iss) Max. (F): | 270p |
| V(GS)th Max. (V): | 4.0 |
| @V(GS) (V) (Test Condition): | 10 |
| @Freq. (Hz) (Test Condition): | 1M |
| V(GS)th (V) (Min): | 2.0 |
| I(D) Max. (A): | 5.3 |
| @I(D) (A) (Test Condition): | 250u |
| I(DSS) Max. (A): | 500u |
| t(d)off Max. (s) Off time: | 9.6n |
| I(GSS) Max. (A): | 100n |
| @I(D) (A) (Test Condition): | 3.2 |
| t(r) Max. (s) Rise time: | 63n |
| I(DM) Max. (A) Pulsed I(D): | 3.8 |
| @I(D) (A) (Test Condition): | 3.2 |
| @Temp (øC): | 100# |
| IDM Max (@25øC Amb): | 21 |
| @V(DS) (V) (Test Condition): | 25 |

