Part Number: IRFP240R

| Internal ID | 85113
|
| Quantity in Stock: | 22
|
| Manufacturer: | IR
|
| Description: | N-Channel Enhancement MOSFET TRANSISTOR
|
| Category: |
Price Per Quantity
| @I(D) (A) (Test Condition): | 10 |
| @Temp (øC) (Test Condition): | 125 |
| g(fs) Min. (S) Trans. conduct.: | 7.3 |
| @I(D) (A) (Test Condition): | 11 |
| @V(DS) (V) (Test Condition): | 25 |
| @Temp (øC): | 100 |
| Mounting Style: | T |
| I(D) Max. (A): | 20# |
| Package Style: | TO-247 |
| Military/High-Rel: | N |
| I(DSS) Max. (A): | 1m |
| r(DS)on Max. (Ohms): | 180m |
| t(d)off Max. (s) Off time: | 68n |
| I(DM) Max. (A) Pulsed I(D): | 12# |
| V(GS)th (V) (Min): | 2 |
| @I(D) (A) (Test Condition): | 250u |
| @Freq. (Hz) (Test Condition): | 1M |
| g(fs) Max; (S) Trans. conduct;: | 11Â |
| @V(DS) (V) (Test Condition): | 160 |
| t(r) Max. (s) Rise time: | 77n |
| C(iss) Max. (F): | 1.3n |
| @V(DS) (V) (Test Condition): | 50 |
| t(f) Max. (s) Fall time.: | 54n |
| V(GS)th Max. (V): | 4 |
| IDM Max (@25øC Amb): | 80# |
| @V(GS) (V) (Test Condition): | 20 |
| I(GSS) Max. (A): | 100n |
| I(GSS) Max. (A): | ë |
| Thermal Resistance Junc-Amb.: | 30 |
| Absolute Max. Power Diss. (W): | 150# |
| V(BR)GSS (V): | 20 |
| V(BR)DSS (V): | 200 |
| @V(GS) (V) (Test Condition): | 10 |
| td(on) Max (s) On time delay: | 21n |
| Thermal Resistance Junc-Case: | 0.83 |
| Maximum Operating Temp (øC): | 150õ |
| Minimum Operating Temp (øC): | -55õ |

