Part Number: IRLD110

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Internal ID
85240
Quantity in Stock:
1106
Manufacturer:
IR
Description:
100V Single N-Channel HEXFET Power MOSFET In A HEXDIP Package TRANS.4PIN DIP TUBE
Category:

Price Per Quantity

1106 in stock

1 - 24 $4.61
25 - 99 $4.57
100 - 499 $4.52
500 - 999 $4.50
999 + $4.47
Military/High-Rel:N
V(BR)DSS (V):100
I(D) Max. (A):1.0
I(DM) Max. (A) Pulsed I(D):.7
@Temp (øC):100#
IDM Max (@25øC Amb):8.0
Absolute Max. Power Diss. (W):1.3
Minimum Operating Temp (øC):-55õ
Maximum Operating Temp (øC):175õ
Thermal Resistance Junc-Amb.:120
V(GS)th Max. (V):2.0
V(GS)th (V) (Min):1.0
@I(D) (A) (Test Condition):250u
I(DSS) Max. (A):250u
@V(DS) (V) (Test Condition):80
@Temp (øC) (Test Condition):150õ
I(GSS) Max. (A):100n
@V(GS) (V) (Test Condition):10
r(DS)on Max. (Ohms):760m
@V(GS) (V) (Test Condition):4.0
@I(D) (A) (Test Condition):.5
g(fs) Min. (S) Trans. conduct.:1.3
@V(DS) (V) (Test Condition):50
@I(D) (A) (Test Condition):.6
C(iss) Max. (F):250pÂ
@V(DS) (V) (Test Condition):25
@Freq. (Hz) (Test Condition):1.0M
td(on) Max (s) On time delay:9.3nÂ
t(r) Max. (s) Rise time:47nÂ
t(d)off Max. (s) Off time:16nÂ
t(f) Max. (s) Fall time.:17nÂ
Package Style:TO-250var
Mounting Style:T
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