Maximum Operating Temp (øC): | 150õ |
f(T) Min. (Hz) Transition Freq: | 200M |
Minimum Operating Temp (øC): | -65õ |
@I(C) (A) (Test Condition): | 50m |
Semiconductor Material: | Silicon |
@V(CE) (V) (Test Condition): | 10 |
V(BR)CBO (V): | 60 |
Military/High-Rel: | N |
V(BR)CEO (V): | 40 |
@V(CE) (V) (Test Condition): | 20 |
Package Style: | TO-116 |
@I(C) (A) (Test Condition): | 10m |
@I(C) (A) (Test Condition): | Ã |
Type (NPN/PNP): | PNP |
I(C) Max. (A): | 600m |
@V(CBO) (V) (Test Condition): | 30 |
I(CBO) Max. (A): | 50n |
Mounting Style: | T |
h(FE) Min. Current gain.: | 35 |
P(D) Max. (W): | 2.0 |
Number of Devices: | 4 |