Part Number: SI4435DY
| Internal ID | 107988
|
| Quantity in Stock: | 65
|
| Manufacturer: | SILICONIX
|
| Description: | -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package IC SO8
|
| Category: |
Price Per Quantity
| @I(D) (A) (Test Condition): | 8.0 |
| @Temp (øC) (Test Condition): | 25õ |
| g(fs) Min. (S) Trans. conduct.: | 15Â |
| @I(D) (A) (Test Condition): | 8.0 |
| @Temp (øC): | 70’ |
| Mounting Style: | S |
| I(D) Max. (A): | 8.0 |
| Package Style: | SO |
| Military/High-Rel: | N |
| I(DSS) Max. (A): | 1.0u |
| r(DS)on Max. (Ohms): | 20m |
| t(d)off Max. (s) Off time: | 120n |
| I(DM) Max. (A) Pulsed I(D): | 6.4 |
| V(GS)th (V) (Min): | 1.0 |
| @(VDS) (V) (Test Condition): | 20 |
| @I(D) (A) (Test Condition): | 250u |
| @V(DS) (V) (Test Condition): | 30 |
| t(r) Max. (s) Rise time: | 20n |
| @V(DS) (V) (Test Condition): | 15 |
| t(f) Max. (s) Fall time.: | 80n |
| IDM Max (@25øC Amb): | 50 |
| @V(GS) (V) (Test Condition): | 20 |
| I(GSS) Max. (A): | 100n |
| I(GSS) Max. (A): | ¢ |
| Thermal Resistance Junc-Amb.: | 50 |
| Absolute Max. Power Diss. (W): | 2.5 |
| V(BR)GSS (V): | 20 |
| V(BR)DSS (V): | 30 |
| @V(GS) (V) (Test Condition): | 10 |
| td(on) Max (s) On time delay: | 30n |
| Maximum Operating Temp (øC): | 150õ |
| Minimum Operating Temp (øC): | -55 |
