Part Number: VN1116N2
| Internal ID | 116899
|
| Quantity in Stock: | 15
|
| Manufacturer: | SEM
|
| Description: | N-channel Enhancement-mode Vertical DMOS Power FET. 160 V - 3 Ohm - 2.0 A. TRANSISTOR
|
| Category: |
Price Per Quantity
| Military/High-Rel: | N |
| V(BR)DSS (V): | 160 |
| V(BR)GSS (V): | 20 |
| I(D) Max. (A): | 1.0 |
| IDM Max (@25øC Amb): | 2.5 |
| @Pulse Width (s) (Condition): | 300u |
| Absolute Max. Power Diss. (W): | 4.0 |
| Minimum Operating Temp (øC): | -55 |
| Maximum Operating Temp (øC): | 150 |
| Thermal Resistance Junc-Case: | 31 |
| Thermal Resistance Junc-Amb.: | 33 |
| V(GS)th Max. (V): | 3 |
| V(GS)th (V) (Min): | 1 |
| @I(D) (A) (Test Condition): | 5m |
| I(DSS) Max. (A): | 5m |
| @V(DS) (V) (Test Condition): | 128 |
| @Temp (øC) (Test Condition): | 125 |
| I(GSS) Max. (A): | 100n |
| @V(GS) (V) (Test Condition): | 20 |
| r(DS)on Max. (Ohms): | 4.0ò |
| @V(GS) (V) (Test Condition): | 5 |
| @I(D) (A) (Test Condition): | 500m |
| g(fs) Min. (S) Trans. conduct.: | 200m |
| g(fs) Max; (S) Trans. conduct;: | 400m |
| @V(DS) (V) (Test Condition): | 25 |
| @I(D) (A) (Test Condition): | 500m |
| C(iss) Max. (F): | 350p |
| @V(DS) (V) (Test Condition): | 25 |
| @Freq. (Hz) (Test Condition): | 1M |
| td(on) Max (s) On time delay: | 30n |
| t(r) Max. (s) Rise time: | 10n |
| t(d)off Max. (s) Off time: | 40n |
| t(f) Max. (s) Fall time.: | 15n |
| Package Style: | TO-39 |
| Mounting Style: | T |
| For less than « cycle | ¬ |
