| Mounting Style: | T |
| P(D) Max. (W): | 400m |
| V(RRM)(V) Rep.Pk.Rev. Voltage: | 20 |
| Q Factor Min.: | 200 |
| Semiconductor Material: | Silicon |
| Military/High-Rel: | N |
| Ct{Cj} Nom. (F) Junction Cap.: | 47pì |
| Package Style: | DO-7 |
| C1/C2 Min. Capacitance Ratio: | 2.0 |
Price: $2.30
Quantity: 50
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Quantity: 50 -
Out of stock
Quantity: 0
Mounting Style: T P(D) Max. (W): 280m V(RRM)(V) Rep.Pk.Rev. Voltage: 15 Q Factor Min.: 150 Semiconductor Material: Silicon Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 460p Package Style: BR-3w C1/C2 Min. Capacitance Ratio: 12.0 -
Out of stock
Quantity: 0V(RRM)(V) Rep.Pk.Rev. Voltage: 20 C1/C2 Min. Capacitance Ratio: 2.0 Q Factor Min.: 150 Semiconductor Material: Silicon Ct{Cj} Nom. (F) Junction Cap.: 100pì -
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Quantity: 6
V(FM) Max.(V) Forward Voltage: ¦ P(D) Max. (W): 500m Q Factor Min.: 250 Semiconductor Material: Silicon Ct{Cj} Nom. (F) Junction Cap.: 120pì C1/C2 Min. Capacitance Ratio: 2.6Â -
Quantity: 11Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 500p C1/C2 Min. Capacitance Ratio: 15.0 V(RRM)(V) Rep.Pk.Rev. Voltage: 28 Q Factor Min.: 150 P(D) Max. (W): 280m Semiconductor Material: Silicon Package Style: BR-3w Mounting Style: T Many Values Available Í -
Quantity: 288
Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 29p C1/C2 Min. Capacitance Ratio: 5.0 V(RRM)(V) Rep.Pk.Rev. Voltage: 30 Q Factor Min.: 200 P(D) Max. (W): 280m Semiconductor Material: Silicon Package Style: BR-3w Mounting Style: T Mask Programmable ROM -
Quantity: 1473Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 6.8p C1/C2 Min. Capacitance Ratio: 2.5 V(RRM)(V) Rep.Pk.Rev. Voltage: 30 Q Factor Min.: 450 P(D) Max. (W): 280m Semiconductor Material: Silicon Package Style: BR-3w Mounting Style: T Junction Temperature Ó -
Quantity: 25
Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 8.2p C1/C2 Min. Capacitance Ratio: 2.5 V(RRM)(V) Rep.Pk.Rev. Voltage: 30 Q Factor Min.: 450 P(D) Max. (W): 280m Semiconductor Material: Silicon Package Style: BR-3w Mounting Style: T Many Values Available Í -
Quantity: 10585Mounting Style: T P(D) Max. (W): 280m V(RRM)(V) Rep.Pk.Rev. Voltage: 30 Q Factor Min.: 400 Semiconductor Material: Silicon Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 12p Package Style: BR-3w C1/C2 Min. Capacitance Ratio: 2.5 -
Out of stock
Quantity: 0
Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 15p C1/C2 Min. Capacitance Ratio: 2.5 V(RRM)(V) Rep.Pk.Rev. Voltage: 30 Q Factor Min.: 400 P(D) Max. (W): 280m Semiconductor Material: Silicon Package Style: BR-3w Mounting Style: T Storage Temperature Þ -
Quantity: 123Military/High-Rel: N Ct{Cj} Nom. (F) Junction Cap.: 39p C1/C2 Min. Capacitance Ratio: 2.5 V(RRM)(V) Rep.Pk.Rev. Voltage: 32 Q Factor Min.: 100 P(D) Max. (W): 280m Semiconductor Material: Silicon Package Style: TO-92 Mounting Style: T Optical Rise Time Û -
Quantity: 9
V(RRM)(V) Rep.Pk.Rev. Voltage: 12 Q Factor Min.: 200 Semiconductor Material: Silicon Ct{Cj} Nom. (F) Junction Cap.: 550pì C1/C2 Min. Capacitance Ratio: 14 -
Out of stock
Quantity: 0Q Factor Min.: 200 Semiconductor Material: Silicon Ct{Cj} Nom. (F) Junction Cap.: 120pì C1/C2 Min. Capacitance Ratio: 10 -
Quantity: 3
V(RRM)(V) Rep.Pk.Rev. Voltage: 20 Q Factor Min.: 250 Ct{Cj} Nom. (F) Junction Cap.: 20pì C1/C2 Min. Capacitance Ratio: 2.0 -
Quantity: 5
P(D) Max. (W): 400m V(RRM)(V) Rep.Pk.Rev. Voltage: 20 Q Factor Min.: 250 Semiconductor Material: Silicon Ct{Cj} Nom. (F) Junction Cap.: 22pì C1/C2 Min. Capacitance Ratio: 2.0
