Maximum Operating Temp (øC): | 125# |
f(T) Min. (Hz) Transition Freq: | 300k |
@V(CE) (V) (Test Condition): | 2.0 |
V(BR)CBO (V): | 100 |
Military/High-Rel: | N |
V(BR)CEO (V): | 75â |
Package Style: | TO-3 |
Absolute Max. Power Diss. (W): | 85 |
@I(C) (A) (Test Condition): | 3.0 |
@I(C) (A) (Test Condition): | è |
I(C) Max. (A): | 7.0 |
I(CBO) Max. (A): | 5.0m |
h(FE) Max. Current gain.: | 90 |
Mounting Style: | T |
h(FE) Min. Current gain.: | 30 |
Price: $20.00
Quantity: 36
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Quantity: 36
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Quantity: 56
t(resp) Max.(s) Response Time: 1p Mounting Style: T Maximum Operating Temp (?C): 175? Minimum Operating Temp (?C): -65 Semiconductor Material: Silicon Military/High-Rel: N V(BR) Nom.(V)Rev.Break.Voltage: 130 @I(R) (A) (Test Condition): 1m I(PPM) Max.(A)Pk.Pulse Current: 8.4 Package Style: DO-27 V(C) Nom. (V) Clamping Voltage: 179 @I(PP) (A) (Test Condition): 8.4 V(RWM) (V) Work.Pk.Rev.Voltage: 111 -
Quantity: 533
Maximum Operating Temp (øC): 200õ f(T) Min. (Hz) Transition Freq: 15M V(BR)CBO (V): 500 Military/High-Rel: N V(BR)CEO (V): 300 t(f) Max. (s) Fall time.: 3.0u Absolute Max. Power Diss. (W): 35 @I(C) (A) (Test Condition): 750m I(CBO) Max. (A): 5.0m° h(FE) Max. Current gain.: 100 h(FE) Min. Current gain.: 10 @V(CE) (V) (Test Condition): 2.0 Package Style: TO-66 I(C) Max. (A): 2.0 I(C) Max. (A): Ú Mounting Style: T t(r) Max. (s) Rise time: 500n t(s) Max. (s) Storage time.: 6.0u