| Military/High-Rel: | N |
| V(BR)CEO (V): | 100 |
| V(BR)CBO (V): | 100 |
| I(C) Max. (A): | 20 |
| Absolute Max. Power Diss. (W): | 160# |
| Maximum Operating Temp (øC): | 200õ |
| I(CBO) Max. (A): | 500u÷ |
| @V(CBO) (V) (Test Condition): | 100 |
| h(FE) Min. Current gain.: | 750 |
| h(FE) Max. Current gain.: | 18k |
| @I(C) (A) (Test Condition): | 10 |
| @V(CE) (V) (Test Condition): | 3.0 |
| f(T) Min. (Hz) Transition Freq: | 4.0M |
| @I(C) (A) (Test Condition): | 10 |
| @V(CE) (V) (Test Condition): | 3.0 |
| V(CE)sat Max. (V): | 4.0 |
| @I(C) (A) (Test Condition): | 20 |
| @I(B) (A) (Test Condition): | 200m |
| Semiconductor Material: | Silicon |
| Package Style: | TO-3 |
| Mounting Style: | T |
| f(ab) | ¦ |
Price: $8.10
Quantity: 0
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Out of stock
Quantity: 0 -
Quantity: 3Maximum Operating Temp (øC): 150õ f(T) Min. (Hz) Transition Freq: 25M @I(C) (A) (Test Condition): 750m V(BR)CBO (V): 80 Military/High-Rel: N V(BR)CEO (V): 80 @V(CE) (V) (Test Condition): 10 Absolute Max. Power Diss. (W): 1.5’ @I(C) (A) (Test Condition): 2.0 I(CBO) Max. (A): 500u h(FE) Max. Current gain.: 15k h(FE) Min. Current gain.: 750 V(CE)sat Max. (V): 3.0 @V(CE) (V) (Test Condition): 3.0 Semiconductor Material: Silicon @I(B) (A) (Test Condition): 40m @I(C) (A) (Test Condition): 4.0 Package Style: TO-126 @V(CBO) (V) (Test Condition): 80 I(C) Max. (A): 4.0 I(C) Max. (A): Å Mounting Style: T -
Quantity: 13
Military/High-Rel: N V(BR)CEO (V): 60 V(BR)CBO (V): 60 I(C) Max. (A): 12 Absolute Max. Power Diss. (W): 150# Maximum Operating Temp (øC): 200õ I(CBO) Max. (A): 1.0m° @V(CBO) (V) (Test Condition): 30 h(FE) Min. Current gain.: 750 h(FE) Max. Current gain.: 18k @I(C) (A) (Test Condition): 6.0 @V(CE) (V) (Test Condition): 3.0 f(T) Min. (Hz) Transition Freq: 4.0M @I(C) (A) (Test Condition): 5.0 @V(CE) (V) (Test Condition): 3.0 V(CE)sat Max. (V): 3.0 @I(C) (A) (Test Condition): 12 @I(B) (A) (Test Condition): 120m Semiconductor Material: Silicon Package Style: TO-3 Mounting Style: T ‰ -
Quantity: 1
Military/High-Rel: N V(BR)CEO (V): 100 V(BR)CBO (V): 100 I(C) Max. (A): 12 Absolute Max. Power Diss. (W): 150# Maximum Operating Temp (øC): 200õ I(CBO) Max. (A): 1.0m° @V(CBO) (V) (Test Condition): 50 h(FE) Min. Current gain.: 750 h(FE) Max. Current gain.: 18k @I(C) (A) (Test Condition): 6.0 @V(CE) (V) (Test Condition): 3.0 f(T) Min. (Hz) Transition Freq: 4.0M @I(C) (A) (Test Condition): 5.0 @V(CE) (V) (Test Condition): 3.0 V(CE)sat Max. (V): 3.0 @I(C) (A) (Test Condition): 12 @I(B) (A) (Test Condition): 120m Semiconductor Material: Silicon Package Style: TO-3 Mounting Style: T Ambient Temperature ’
