Military/High-Rel: | N |
V(BR)CEO (V): | 300 |
I(C) Max. (A): | 500m |
Absolute Max. Power Diss. (W): | 20 |
Maximum Operating Temp (øC): | 140õ |
I(CBO) Max. (A): | 100u |
h(FE) Min. Current gain.: | 30 |
h(FE) Max. Current gain.: | 240 |
@I(C) (A) (Test Condition): | 50m |
@V(CE) (V) (Test Condition): | 10 |
Package Style: | TO-126 |
Mounting Style: | T |
ICEV | ¶ |
Price: $1.46
Quantity: 244
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Quantity: 244
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Out of stockQuantity: 02N3584 is on sale at our online store for 19.99. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Out of stockQuantity: 0
Military/High-Rel: N V(BR)CEO (V): 300 V(BR)CBO (V): 500 I(C) Max. (A): 2.0 Absolute Max. Power Diss. (W): 35 Maximum Operating Temp (øC): 200õ I(CBO) Max. (A): 5.0m° h(FE) Min. Current gain.: 8.0 h(FE) Max. Current gain.: 80 @I(C) (A) (Test Condition): 1.0 @V(CE) (V) (Test Condition): 2.0 f(T) Min. (Hz) Transition Freq: 10M t(r) Max. (s) Rise time: 3.0u t(s) Max. (s) Storage time.: 4.0u t(f) Max. (s) Fall time.: 3.0u Package Style: TO-66 Mounting Style: T Write-pulse Width; Minimum Ö -
Quantity: 33
Maximum Operating Temp (øC): 200õ f(T) Min. (Hz) Transition Freq: 10M V(BR)CBO (V): 250 Military/High-Rel: N V(BR)CEO (V): 175 t(f) Max. (s) Fall time.: 200n Absolute Max. Power Diss. (W): 35 @I(C) (A) (Test Condition): 500m I(CBO) Max. (A): 10m° h(FE) Max. Current gain.: 200 h(FE) Min. Current gain.: 40 @V(CE) (V) (Test Condition): 10 Package Style: TO-66 I(C) Max. (A): 1.0 Mounting Style: T t(s) Max. (s) Storage time.: 2.0uÂ