Maximum Operating Temp (øC):150õ
V(BR)CBO (V):60
Military/High-Rel:N
V(BR)CEO (V):60
Absolute Max. Power Diss. (W):65#
@I(C) (A) (Test Condition):3.0
I(CBO) Max. (A):100u
h(FE) Min. Current gain.:1.0k
t(off) Max. (s) Off time:8.5uÂ
V(CE)sat Max. (V):4.0
@V(CE) (V) (Test Condition):3.0
Semiconductor Material:Silicon
@I(B) (A) (Test Condition):20m
@I(C) (A) (Test Condition):5.0
t(on) Max. (s) On time.:1.5uÂ
Package Style:TO-220AB
Description:R1 = 4.0k; R2 = 100 ohm typ. C-E Diode.
@V(CBO) (V) (Test Condition):60
I(C) Max. (A):5.0
Mounting Style:T