| h(FE) Min. Current gain.: | 1.0k |
| Mounting Style: | T |
| Package Style: | SOT-93 |
| Military/High-Rel: | N |
| t(off) Max. (s) Off time: | 11u |
| @I(C) (A) (Test Condition): | 10 |
| V(BR)CEO (V): | 60 |
| Description: | R1 = 5.0k; R2 = 80 ohm typ. Diode. |
| V(CE)sat Max. (V): | 3.0 |
| @I(C) (A) (Test Condition): | 5.0 |
| @I(C) (A) (Test Condition): | ó |
| @V(CE) (V) (Test Condition): | 4.0 |
| Absolute Max. Power Diss. (W): | 125# |
| Semiconductor Material: | Silicon |
| @V(CBO) (V) (Test Condition): | 60 |
| I(C) Max. (A): | 10 |
| t(on) Max. (s) On time.: | 900n |
| V(BR)CBO (V): | 60 |
| @I(B) (A) (Test Condition): | 40m |
| Maximum Operating Temp (øC): | 150õ |
| I(CBO) Max. (A): | 400u |
Price: $3.40
Quantity: 182
-
Quantity: 182 -
Quantity: 304
h(FE) Min. Current gain.: 1.0k Mounting Style: T Package Style: SOT-93 Military/High-Rel: N t(off) Max. (s) Off time: 11u @I(C) (A) (Test Condition): 10 V(BR)CEO (V): 100 Description: R1 = 5.0k; R2 = 80 ohm typ.C-E Diode. V(CE)sat Max. (V): 3.0 @I(C) (A) (Test Condition): 5.0 @I(C) (A) (Test Condition): ‚ @V(CE) (V) (Test Condition): 4.0 Absolute Max. Power Diss. (W): 125# Semiconductor Material: Silicon @V(CBO) (V) (Test Condition): 100 I(C) Max. (A): 10 t(on) Max. (s) On time.: 900n V(BR)CBO (V): 100 @I(B) (A) (Test Condition): 40m Maximum Operating Temp (øC): 150õ I(CBO) Max. (A): 400u -
Quantity: 40h(FE) Min. Current gain.: 500 Mounting Style: T Package Style: TO-220AB Military/High-Rel: N t(off) Max. (s) Off time: 4.5u @I(C) (A) (Test Condition): 2.0 V(BR)CEO (V): 80 V(CE)sat Max. (V): 2.5 @I(C) (A) (Test Condition): 2.0 @I(C) (A) (Test Condition): × @V(CE) (V) (Test Condition): 4.0 Absolute Max. Power Diss. (W): 50# Semiconductor Material: Silicon @V(CBO) (V) (Test Condition): 80 I(C) Max. (A): 4.0 t(on) Max. (s) On time.: 2.6u V(BR)CBO (V): 80 @I(B) (A) (Test Condition): 8.0m Maximum Operating Temp (øC): 150õ I(CBO) Max. (A): 200u -
Quantity: 46
Military/High-Rel: N V(BR)CEO (V): 80 V(BR)CBO (V): 80 I(C) Max. (A): 5.0 Absolute Max. Power Diss. (W): 65# Maximum Operating Temp (øC): 150õ I(CBO) Max. (A): 100uÌ @V(CBO) (V) (Test Condition): 80 h(FE) Min. Current gain.: 1.0k @I(C) (A) (Test Condition): 3.0 @V(CE) (V) (Test Condition): 3.0 V(CE)sat Max. (V): 4.0 @I(C) (A) (Test Condition): 5.0 @I(B) (A) (Test Condition): 20m t(on) Max. (s) On time.: 1.5u t(off) Max. (s) Off time: 8.5u Semiconductor Material: Silicon Package Style: TO-220AB Mounting Style: T Not at Breakdown Voltage ê -
Out of stock
Quantity: 0
h(FE) Min. Current gain.: 1.0k Mounting Style: T Package Style: TO-220AB Military/High-Rel: N t(off) Max. (s) Off time: 8.5u @I(C) (A) (Test Condition): 5.0 V(BR)CEO (V): 100 V(CE)sat Max. (V): 4.0 @I(C) (A) (Test Condition): 3.0 @I(C) (A) (Test Condition): Ô @V(CE) (V) (Test Condition): 3.0 Absolute Max. Power Diss. (W): 65# Semiconductor Material: Silicon @V(CBO) (V) (Test Condition): 100 I(C) Max. (A): 5.0 t(on) Max. (s) On time.: 1.5u V(BR)CBO (V): 100 @I(B) (A) (Test Condition): 20m Maximum Operating Temp (øC): 150õ I(CBO) Max. (A): 100u -
Quantity: 319
Military/High-Rel: N V(BR)CEO (V): 60 V(BR)CBO (V): 60 I(C) Max. (A): 4.0 Absolute Max. Power Diss. (W): 50# Maximum Operating Temp (?C): 150? I(CBO) Max. (A): 200u @V(CBO) (V) (Test Condition): 60 h(FE) Min. Current gain.: 500 @I(C) (A) (Test Condition): 2.0 @V(CE) (V) (Test Condition): 4.0 V(CE)sat Max. (V): 2.5 @I(C) (A) (Test Condition): 2.0 @I(B) (A) (Test Condition): 8.0m t(on) Max. (s) On time.: 2.6u? t(off) Max. (s) Off time: 4.5u? Semiconductor Material: Silicon Package Style: TO-220AB Mounting Style: T ? Description: R1 = 6.0k; R2 = 100 ohm typ. C-E Diode. -
Quantity: 86
t(off) Max. (s) Off time: 4.5u? Semiconductor Material: Silicon t(on) Max. (s) On time.: 2.6u? -
Quantity: 317
V(BR)CBO (V): 80 V(BR)CEO (V): 80 Absolute Max. Power Diss. (W): 125# @I(C) (A) (Test Condition): 5.0 I(CBO) Max. (A): 400u h(FE) Min. Current gain.: 1.0k t(off) Max. (s) Off time: 11u? V(CE)sat Max. (V): 3.0 @V(CE) (V) (Test Condition): 4.0 Semiconductor Material: Silicon @I(B) (A) (Test Condition): 40m @I(C) (A) (Test Condition): 10 t(on) Max. (s) On time.: 900n? Description: R1 = 5.0k; R2 = 80 ohm typ. Diode. @V(CBO) (V) (Test Condition): 80 I(C) Max. (A): 10
