h(FE) Max. Current gain.:20k
h(FE) Min. Current gain.:1.0k
t(s) Max. (s) Storage time.:900n
Mounting Style:T
Package Style:TO-220AB
Military/High-Rel:N
V(BR)CEO (V):60
t(r) Max. (s) Rise time:300n
t(f) Max. (s) Fall time.:1.3u
@I(C) (A) (Test Condition):3.0
@I(C) (A) (Test Condition):µ
@V(CE) (V) (Test Condition):4.0
Absolute Max. Power Diss. (W):2.0
Semiconductor Material:Silicon
I(C) Max. (A):8.0
t(d) Max. (s) Delay time.:35n
V(BR)CBO (V):60
Maximum Operating Temp (øC):150þ
I(CBO) Max. (A):50u°