| @V(DS) (V) (Test Condition): | 20 |
| Maximum Operating Temp (øC): | 200# |
| @V(DS) (V) (Test Condition): | 20 |
| @V(GS) (V) (Test Condition): | 30 |
| @V(DS) (V) (Test Condition): | 10 |
| Military/High-Rel: | N |
| g(fs) Max; (S) Trans. conduct;: | 10mé |
| Absolute Max. Power Diss. (W): | 300m |
| g(fs) Min. (S) Trans. conduct.: | 2.5mé |
| V(BR)GSS (V): | 50 |
| V(GS)off Max. (V): | 10 |
| C(iss) Max. (F): | 18p |
| I(D) Max. (A): | 15m |
| Package Style: | TO-18 |
| I(DSS) Min. (A): | 3.0m |
| @I(D) (A) (Test Condition): | 1.0n |
| I(DSS) Max. (A): | 15m |
| I(DSS) Max. (A): | ë |
| I(DSS) Max. (A): | 15m |
| I(GSS) Max. (A): | 500p |
| Mounting Style: | T |
| I(G) Max. (A): | 10m |
| @V(DS) (V) (Test Condition): | 20 |
Price: $10.26
Quantity: 1
-
Quantity: 1 -
Quantity: 26@V(DS) (V) (Test Condition): 30 @V(DS) (V) (Test Condition): 30 @V(GS) (V) (Test Condition): 30 @V(DS) (V) (Test Condition): 30 g(fs) Max; (S) Trans. conduct;: 1.0mé g(fs) Min. (S) Trans. conduct.: 200ué V(BR)GSS (V): 50 V(GS)off Max. (V): 2.5 C(iss) Max. (F): 10p I(D) Max. (A): 250u I(DSS) Min. (A): 50u @I(D) (A) (Test Condition): 500p I(DSS) Max. (A): 250u I(DSS) Max. (A): 250u I(GSS) Max. (A): 1.0n I(G) Max. (A): 100m @V(DS) (V) (Test Condition): 30 -
Out of stock
Quantity: 0AN7470 is on sale at our online store for 10.86635. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
-
Out of stock
Quantity: 0g(fs) Min. (S) Trans. conduct.: 1.3m Mounting Style: T Package Style: TO-92 Military/High-Rel: N V(GS)off Max. (V): 5.0 I(DSS) Min. (A): 8.0m g(fs) Max; (S) Trans. conduct;: 4.0m C(iss) Max. (F): 6.0p @V(DS) (V) (Test Condition): 15 I(GSS) Max. (A): 4.0m Absolute Max. Power Diss. (W): 360m V(BR)GSS (V): 25 V(BR)DSS (V): 25 Maximum Operating Temp (øC): 150þ -
Out of stock
Quantity: 0
Maximum Operating Temp (øC): 125þ Military/High-Rel: N Absolute Max. Power Diss. (W): 350m g(fs) Min. (S) Trans. conduct.: .50m V(BR)GSS (V): 30 r(DS)on Max. (Ohms): 3.0k V(GS)off Max. (V): 1.5 C(iss) Max. (F): 8.0p Package Style: TO-106 I(DSS) Min. (A): 1.0m I(DSS) Max. (A): å I(GSS) Max. (A): .50n Mounting Style: T @V(DS) (V) (Test Condition): 20 -
Quantity: 95
@V(DS) (V) (Test Condition): 20 Maximum Operating Temp (øC): 150# @V(DS) (V) (Test Condition): 30 @V(GS) (V) (Test Condition): 30 @V(DS) (V) (Test Condition): 30 Military/High-Rel: N g(fs) Max; (S) Trans. conduct;: 2.5mé Absolute Max. Power Diss. (W): 300m g(fs) Min. (S) Trans. conduct.: 600ué V(BR)GSS (V): 40 V(GS)off Max. (V): 7.0 C(iss) Max. (F): 20p I(D) Max. (A): 2.5m Package Style: TO-18 I(DSS) Min. (A): 2.5m @I(D) (A) (Test Condition): 5.0n I(DSS) Max. (A): Æ I(GSS) Max. (A): 5.0n Mounting Style: T I(G) Max. (A): 10m @V(DS) (V) (Test Condition): 30 -
Quantity: 5E100 is on sale at our online store for 11.3597. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
-
Quantity: 6
@Vgs (test) (V): 5.0 Maximum Operating Temp (øC): 150’ Military/High-Rel: N g(fs) Max; (S) Trans. conduct;: 10.0m Absolute Max. Power Diss. (W): 500m g(fs) Min. (S) Trans. conduct.: 3.0m V(BR)GSS (V): 25 V(GS)off Max. (V): 5.0 C(iss) Max. (F): 5.0p Package Style: TO-78 I(DSS) Min. (A): 7.0m I(DSS) Max. (A): » I(GSS) Max. (A): 100p Mounting Style: T @V(DS) (V) (Test Condition): 10.0 -
Quantity: 1Maximum Operating Temp (øC): 200þ Military/High-Rel: N V(BR)DSS (V): 30 g(fs) Max; (S) Trans. conduct;: 4.0m Absolute Max. Power Diss. (W): 300m g(fs) Min. (S) Trans. conduct.: 1.0m V(BR)GSS (V): 30 V(GS)off Max. (V): 4.0 C(iss) Max. (F): 6.0p I(D) Max. (A): 15m Package Style: TO-72 I(DSS) Min. (A): 3.0m I(DSS) Max. (A): ë I(GSS) Max. (A): 100p Mounting Style: T @V(DS) (V) (Test Condition): 15 -
Quantity: 66Maximum Operating Temp (øC): 175þ Military/High-Rel: N V(BR)DSS (V): 40 g(fs) Max; (S) Trans. conduct;: 250u Absolute Max. Power Diss. (W): 300m g(fs) Min. (S) Trans. conduct.: 80u V(BR)GSS (V): 40 V(GS)off Max. (V): 3.0 C(iss) Max. (F): 3.0p I(D) Max. (A): 50m Package Style: TO-72 I(DSS) Min. (A): 240u I(DSS) Max. (A): ¶ I(GSS) Max. (A): 10p Mounting Style: T @V(DS) (V) (Test Condition): 10 -
Out of stock
Quantity: 0
@Vgs (test) (V): 3.0 V(BR)DSS (V): 40 g(fs) Min. (S) Trans. conduct.: 12m I(D) Max. (A): 30m I(DSS) Min. (A): 12m -
Quantity: 13
V(BR)DSS (V): 25 g(fs) Max; (S) Trans. conduct;: 5.0m g(fs) Min. (S) Trans. conduct.: 1.0m V(BR)GSS (V): 25 V(GS)off Max. (V): 6.0 C(iss) Max. (F): 7.0p I(D) Max. (A): 16m I(DSS) Min. (A): 5.0m I(GSS) Max. (A): 1.0n @V(DS) (V) (Test Condition): 15 -
Quantity: 4Military/High-Rel: N V(BR)DSS (V): 25 V(BR)GSS (V): 25 Absolute Max. Power Diss. (W): 300m Maximum Operating Temp (øC): 200þ I(GSS) Max. (A): 100p V(GS)off Max. (V): 6.0 @Vgs (test) (V): 10¢ I(DSS) Min. (A): 30m g(fs) Min. (S) Trans. conduct.: 6.0m g(fs) Max; (S) Trans. conduct;: 10m @V(DS) (V) (Test Condition): 10 C(iss) Max. (F): 5.0p Package Style: TO-72 Mounting Style: T Per Transistor ‚ -
Out of stock
Quantity: 0
Military/High-Rel: N Absolute Max. Power Diss. (W): 100m g(fs) Min. (S) Trans. conduct.: 2.0m Package Style: SPAKvar I(DSS) Min. (A): 1.5m Mounting Style: T -
Out of stock
Quantity: 0Military/High-Rel: N V(BR)DSS (V): 30 V(BR)GSS (V): 20 Absolute Max. Power Diss. (W): 300m Maximum Operating Temp (øC): 125þ I(GSS) Max. (A): 1.0n V(GS)off Max. (V): 4.0 I(DSS) Min. (A): 5.0m g(fs) Min. (S) Trans. conduct.: 1.0m @V(DS) (V) (Test Condition): 20 C(iss) Max. (F): 6.0p Package Style: TO-106 Mounting Style: T Junction Temperature Ó -
Quantity: 1Military/High-Rel: N V(BR)DSS (V): 30 V(BR)GSS (V): 20 Absolute Max. Power Diss. (W): 300m Maximum Operating Temp (øC): 125þ I(GSS) Max. (A): 1.0n V(GS)off Max. (V): 6.0 I(DSS) Min. (A): 10m g(fs) Max; (S) Trans. conduct;: 2.0m @V(DS) (V) (Test Condition): 20 C(iss) Max. (F): 6.0p Package Style: TO-106 Mounting Style: T Junction Temperature Ô
