| h(FE) Max. Current gain.: | 70 |
| Structure NPN/PNP: | NPN |
| h(FE) Min. Current gain.: | 50 |
| @I(C) (A) (Test Condition): | 1.0m |
| @I(C) (A) (Test Condition): | Ù |
| Mounting Style: | T |
| @V(CE) (V) (Test Condition): | 200m |
| Absolute Max. Power Diss. (W): | 100m |
| Package Style: | TO-5 |
| Semiconductor Material: | Germanium |
| @I(C) (A) (Test Condition): | 1.0m |
| @V(CBO) (V) (Test Condition): | 5.0 |
| V(BR)CEO (V): | 10 |
| f(T) Min. (Hz) Transition Freq: | 5.0M |
| V(BR)CBO (V): | 10 |
| @V(CE) (V) (Test Condition): | 5.0 |
| Description: | Pt 100mW;BVCBO 10V;ICBO 5.0uA;hfe 60typ;Cob 15p typ;NF 16db;fab 5.0M min |
| I(CBO) Max. (A): | 5.0u |
Price: $49.50
Quantity: 6
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Quantity: 6 -
Quantity: 11Semiconductor Material: Germanium @I(B) (A) (Test Condition): 10m @I(C) (A) (Test Condition): 200m Description: Pc-.15W max;BVCBO-20V;IC-.30A max;ton-1100ns;toff-1800ns;fab-8Mc Structure NPN/PNP: NPN No. of Units Per Package: 1 V(CE)sat Max. (V): .25 -
Quantity: 65
Structure NPN/PNP: NPN V(CE)sat Max. (V): .25 h(FE) Min. Current gain.: 25 @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): Ô Mounting Style: T @V(CE) (V) (Test Condition): 1.0 Absolute Max. Power Diss. (W): 150m Package Style: TO-5 Semiconductor Material: Germanium @I(C) (A) (Test Condition): 1.0m No. of Units Per Package: 1 @V(CBO) (V) (Test Condition): 20 @I(C) (A) (Test Condition): 200m V(BR)CEO (V): 15 f(T) Min. (Hz) Transition Freq: 5.0M¦ I(C) Max. (A): 300m @I(B) (A) (Test Condition): 13.3m V(BR)CBO (V): 25 @V(CE) (V) (Test Condition): 5.0 Description: Pc-.15W max;BVCBO-25V;IC-.30A max;ton-1300ns;toff-1800ns;fab-5Mc I(CBO) Max. (A): 6.0u
