| Structure NPN/PNP: | NPN |
| V(CE)sat Max. (V): | .25 |
| h(FE) Min. Current gain.: | 25 |
| @I(C) (A) (Test Condition): | 10m |
| @I(C) (A) (Test Condition): | Ô |
| Mounting Style: | T |
| @V(CE) (V) (Test Condition): | 1.0 |
| Absolute Max. Power Diss. (W): | 150m |
| Package Style: | TO-5 |
| Semiconductor Material: | Germanium |
| @I(C) (A) (Test Condition): | 1.0m |
| No. of Units Per Package: | 1 |
| @V(CBO) (V) (Test Condition): | 20 |
| @I(C) (A) (Test Condition): | 200m |
| V(BR)CEO (V): | 15 |
| f(T) Min. (Hz) Transition Freq: | 5.0M¦ |
| I(C) Max. (A): | 300m |
| @I(B) (A) (Test Condition): | 13.3m |
| V(BR)CBO (V): | 25 |
| @V(CE) (V) (Test Condition): | 5.0 |
| Description: | Pc-.15W max;BVCBO-25V;IC-.30A max;ton-1300ns;toff-1800ns;fab-5Mc |
| I(CBO) Max. (A): | 6.0u |
Price: $9.98
Quantity: 65
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Quantity: 65 -
Quantity: 11Semiconductor Material: Germanium @I(B) (A) (Test Condition): 10m @I(C) (A) (Test Condition): 200m Description: Pc-.15W max;BVCBO-20V;IC-.30A max;ton-1100ns;toff-1800ns;fab-8Mc Structure NPN/PNP: NPN No. of Units Per Package: 1 V(CE)sat Max. (V): .25 -
Quantity: 6
h(FE) Max. Current gain.: 70 Structure NPN/PNP: NPN h(FE) Min. Current gain.: 50 @I(C) (A) (Test Condition): 1.0m @I(C) (A) (Test Condition): Ù Mounting Style: T @V(CE) (V) (Test Condition): 200m Absolute Max. Power Diss. (W): 100m Package Style: TO-5 Semiconductor Material: Germanium @I(C) (A) (Test Condition): 1.0m @V(CBO) (V) (Test Condition): 5.0 V(BR)CEO (V): 10 f(T) Min. (Hz) Transition Freq: 5.0M V(BR)CBO (V): 10 @V(CE) (V) (Test Condition): 5.0 Description: Pt 100mW;BVCBO 10V;ICBO 5.0uA;hfe 60typ;Cob 15p typ;NF 16db;fab 5.0M min I(CBO) Max. (A): 5.0u
