Price: $29.60
Quantity: 17
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Quantity: 17mtm5n20 is on sale at our online store for 29.9552. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970. -
Quantity: 70Maximum Operating Temp (øC): 150õ Military/High-Rel: N t(f) Max. (s) Fall time.: 100n V(BR)DSS (V): 850 Absolute Max. Power Diss. (W): 75 g(fs) Min. (S) Trans. conduct.: 500m V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 8.0 C(iss) Max. (F): 1.2n I(D) Max. (A): 2.0 Package Style: TO-220AB Description: ë Mounting Style: T I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 150n @I(D) (A) (Test Condition): 1.0 @V(DS) (V) (Test Condition): 15 -
Quantity: 1
Military/High-Rel: N V(BR)DSS (V): 60 V(BR)GSS (V): 20 I(D) Max. (A): 60 Absolute Max. Power Diss. (W): 250 Maximum Operating Temp (øC): 150õ I(GSS) Max. (A): 100n r(DS)on Max. (Ohms): 28m g(fs) Min. (S) Trans. conduct.: 10 @V(DS) (V) (Test Condition): 15 @I(D) (A) (Test Condition): 30 C(iss) Max. (F): 5.0n t(r) Max. (s) Rise time: 350n t(f) Max. (s) Fall time.: 400n Package Style: TO-204AE Mounting Style: T Junction Temperature Ô -
Quantity: 90
t(f) Max. (s) Fall time.: 60n V(BR)DSS (V): 60 Absolute Max. Power Diss. (W): 125 g(fs) Min. (S) Trans. conduct.: 12 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 40mò C(iss) Max. (F): 1.8n I(D) Max. (A): 40 I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 40n @I(D) (A) (Test Condition): 20 @V(DS) (V) (Test Condition): 15 -
Quantity: 3406@(VDS) (V) (Test Condition): 20 td(on) Max (s) On time delay: 20n @Temp (øC) (Test Condition): 25õ @V(DS) (V) (Test Condition): 25 t(f) Max. (s) Fall time.: 65n Thermal Resistance Junc-Case: 6.25 Thermal Resistance Junc-Amb.: 100 Minimum Operating Temp (øC): -55õ V(GS)th Max. (V): 4.5 @V(GS) (V) (Test Condition): 10 @Freq. (Hz) (Test Condition): 1.0M V(GS)th (V) (Min): 2 @I(D) (A) (Test Condition): 1m t(d)off Max. (s) Off time: 65n @I(D) (A) (Test Condition): 4 t(r) Max. (s) Rise time: 60n @I(D) (A) (Test Condition): 4.0 IDM Max (@25øC Amb): 20 -
Quantity: 70g(fs) Min. (S) Trans. conduct.: 5.0 @I(D) (A) (Test Condition): 6.0 Mounting Style: T I(D) Max. (A): 12 Package Style: TO-251 Military/High-Rel: N r(DS)on Max. (Ohms): 180m t(r) Max. (s) Rise time: 95n C(iss) Max. (F): 400p @V(DS) (V) (Test Condition): 15 t(f) Max. (s) Fall time.: 50n I(GSS) Max. (A): 100n Absolute Max. Power Diss. (W): 40 V(BR)GSS (V): 15 V(BR)DSS (V): 60 Maximum Operating Temp (øC): 150õ -
Quantity: 20
Military/High-Rel: N V(BR)DSS (V): 50 V(BR)GSS (V): 20 I(D) Max. (A): 5.0 Absolute Max. Power Diss. (W): 20 Maximum Operating Temp (øC): 150õ I(GSS) Max. (A): 100n r(DS)on Max. (Ohms): 400m g(fs) Min. (S) Trans. conduct.: 1.0 @V(DS) (V) (Test Condition): 15 @I(D) (A) (Test Condition): 2.5 C(iss) Max. (F): 300p t(r) Max. (s) Rise time: 25n t(f) Max. (s) Fall time.: 50n Package Style: TO-252 Mounting Style: S Channel -
Quantity: 20
t(f) Max. (s) Fall time.: 180n V(BR)DSS (V): 500 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 5.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 400m C(iss) Max. (F): 3.0n I(D) Max. (A): 13 I(GSS) Max. (A): 500n t(r) Max. (s) Rise time: 180n @I(D) (A) (Test Condition): 7.0 @V(DS) (V) (Test Condition): 10 -
Quantity: 2
t(f) Max. (s) Fall time.: 180n V(BR)DSS (V): 400 g(fs) Min. (S) Trans. conduct.: 5.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 300m C(iss) Max. (F): 3.0n I(D) Max. (A): 15 I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 180n @I(D) (A) (Test Condition): 8.0 @V(DS) (V) (Test Condition): 10 -
Quantity: 51mth20n15 is on sale at our online store for 56.925. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Quantity: 295
Maximum Operating Temp (øC): 150õ Military/High-Rel: N t(f) Max. (s) Fall time.: 200n V(BR)DSS (V): 900 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 2.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 3.0 C(iss) Max. (F): 2.6n I(D) Max. (A): 6.0 Package Style: TO-218AC Description: Ë Mounting Style: T I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 200n @I(D) (A) (Test Condition): 3.0 @V(DS) (V) (Test Condition): 15 -
Out of stock
Quantity: 0
Maximum Operating Temp (øC): 150õ Military/High-Rel: N t(f) Max. (s) Fall time.: 120n V(BR)DSS (V): 500 Absolute Max. Power Diss. (W): 150 g(fs) Min. (S) Trans. conduct.: 2.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 800m C(iss) Max. (F): 1.8n I(D) Max. (A): 7.0 Package Style: TO-218AC Description: – Mounting Style: T I(GSS) Max. (A): 500n t(r) Max. (s) Rise time: 150n @I(D) (A) (Test Condition): 3.5 @V(DS) (V) (Test Condition): 10 -
Quantity: 2Military/High-Rel: N V(BR)DSS (V): 100 V(BR)GSS (V): 100Ê I(D) Max. (A): 12 Absolute Max. Power Diss. (W): 75 Maximum Operating Temp (øC): 150þ I(GSS) Max. (A): 500n r(DS)on Max. (Ohms): .25ò g(fs) Min. (S) Trans. conduct.: 3.0 @V(DS) (V) (Test Condition): 10 @I(D) (A) (Test Condition): 6.0 C(iss) Max. (F): 1.2n Package Style: TO-3 Mounting Style: T Write-pulse Width; Minimum ö -
Quantity: 24MTM15N50 is on sale at our online store for 75.00. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970. -
Quantity: 13
V(BR)DSS (V): 80 g(fs) Min. (S) Trans. conduct.: 6.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 150m C(iss) Max. (F): 1.2n I(D) Max. (A): 20 I(GSS) Max. (A): 100n t(r) Max. (s) Rise time: 450n @I(D) (A) (Test Condition): 10 @V(DS) (V) (Test Condition): 15 -
Quantity: 6580
@(VDS) (V) (Test Condition): 20 @V(DS) (V) (Test Condition): 60 td(on) Max (s) On time delay: 36n @V(GS) (V) (Test Condition): 20 @Temp (øC) (Test Condition): 25õ @V(DS) (V) (Test Condition): 25 t(f) Max. (s) Fall time.: 100n Thermal Resistance Junc-Case: 1.25 Thermal Resistance Junc-Amb.: 62.5 V(BR)DSS (V): 60 Absolute Max. Power Diss. (W): 100 g(fs) Min. (S) Trans. conduct.: 8.0 V(BR)GSS (V): 20 r(DS)on Max. (Ohms): 40m Minimum Operating Temp (øC): -55õ C(iss) Max. (F): 2.0n V(GS)th Max. (V): 4.0 @V(GS) (V) (Test Condition): 10 @Freq. (Hz) (Test Condition): 1.0M V(GS)th (V) (Min): 2.0 I(D) Max. (A): 36 @I(D) (A) (Test Condition): 250u I(DSS) Max. (A): 10u t(d)off Max. (s) Off time: 90n I(GSS) Max. (A): 100n @I(D) (A) (Test Condition): 18 t(r) Max. (s) Rise time: 200n I(DM) Max. (A) Pulsed I(D): 22 @I(D) (A) (Test Condition): 18 @Temp (øC): 100 IDM Max (@25øC Amb): 144 @Pulse Width (s) (Condition): 10u @V(DS) (V) (Test Condition): 8.0
