Military/High-Rel: | N |
Number of Devices: | 4 |
P(D) Max. (W): | 2.0 |
h(FE) Min. Current gain.: | 30 |
@I(C) (A) (Test Condition): | 300m |
@V(CE) (V) (Test Condition): | 10 |
f(T) Min. (Hz) Transition Freq: | 200M |
Package Style: | TO-116 |
Mounting Style: | T |
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Price: $0.19
Quantity: 0
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Out of stockQuantity: 0
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Sale!Quantity: 16mc74hc245a is on sale at our online store for 0.61985. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Quantity: 24156
Military/High-Rel: N Number of Devices: 4 V(BR)CEO (V): 40 I(C) Max. (A): 200m P(D) Max. (W): 900m h(FE) Min. Current gain.: 60 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 1.0 f(T) Min. (Hz) Transition Freq: 200M Package Style: TO-116 Mounting Style: T @ above 125øC ¥ Description: VCBO 40Vdc;VEBO 5.0Vdc -
Quantity: 895
f(T) Min. (Hz) Transition Freq: 50M @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 200 Package Style: TO-116 Description: VCBO 200Vdc;VEBO 5Vdc @I(C) (A) (Test Condition): 1.0m @I(C) (A) (Test Condition): ¢ I(C) Max. (A): 500m Mounting Style: T h(FE) Min. Current gain.: 25 P(D) Max. (W): 1.7 Number of Devices: 4 -
Quantity: 201
Military/High-Rel: N Number of Devices: 1 V(BR)CEO (V): 24 I(C) Max. (A): 50m P(D) Max. (W): 750m Minimum Operating Temp (øC): -40 Maximum Operating Temp (øC): 85 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 3.0 Package Style: DIP Mounting Style: T • Description: VBE matched +/-5mV -
Quantity: 583
Maximum Operating Temp (øC): 150 f(T) Min. (Hz) Transition Freq: 250M Minimum Operating Temp (øC): -55 @I(C) (A) (Test Condition): 10m @V(CE) (V) (Test Condition): 1 V(BR)CBO (V): 60 Military/High-Rel: N V(BR)CEO (V): 40 Package Style: DIP Emitter-Base Diode (Y/N): No @I(C) (A) (Test Condition): 100u @I(C) (A) (Test Condition): ® Type (NPN/PNP): NPN @V(CBO) (V) (Test Condition): 40 I(CBO) Max. (A): 50n Mounting Style: T h(FE) Min. Current gain.: 30 P(D) Max. (W): 2 Number of Devices: 4 -
Out of stockQuantity: 0
f(T) Min. (Hz) Transition Freq: 150M @V(CE) (V) (Test Condition): 1.0 Military/High-Rel: N V(BR)CEO (V): 40 Package Style: TO-116 Description: Memory Driver XSTRs @I(C) (A) (Test Condition): 150m @I(C) (A) (Test Condition): Á I(C) Max. (A): 1.5 Mounting Style: T h(FE) Min. Current gain.: 35 P(D) Max. (W): 1.7 Number of Devices: 4 -
Quantity: 170
Military/High-Rel: N Number of Devices: 4 V(BR)CEO (V): 40 I(C) Max. (A): 1.0 P(D) Max. (W): 1.5 h(FE) Min. Current gain.: 20 @I(C) (A) (Test Condition): 500m @V(CE) (V) (Test Condition): 1.0 f(T) Min. (Hz) Transition Freq: 125M Package Style: TO-116 Mounting Style: T BVCES or Punch through º Description: Memory Driver XSTRs -
Out of stockQuantity: 0
Military/High-Rel: N Number of Devices: 4 V(BR)CEO (V): 40 V(BR)CBO (V): 40 I(C) Max. (A): 200m P(D) Max. (W): 900m h(FE) Min. Current gain.: 50 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 1.0 f(T) Min. (Hz) Transition Freq: 200M @I(C) (A) (Test Condition): 10m Package Style: TO-116 Mounting Style: T Description: Complementary;VCBO 40V -
Quantity: 360
Military/High-Rel: N Number of Devices: 4 Type (NPN/PNP): Mix V(BR)CEO (V): 40 V(BR)CBO (V): 40 P(D) Max. (W): 2 Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 150 I(CBO) Max. (A): 50n @V(CBO) (V) (Test Condition): 30 h(FE) Min. Current gain.: 30 @I(C) (A) (Test Condition): 100u @V(CE) (V) (Test Condition): 1 f(T) Min. (Hz) Transition Freq: 200M @I(C) (A) (Test Condition): 10m Emitter-Base Diode (Y/N): No Package Style: DIP Mounting Style: T @ above 125øC ¥ -
Out of stockQuantity: 0mpq3725 is on sale at our online store for 4.09. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Quantity: 63
f(T) Min. (Hz) Transition Freq: 200M @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 40 Package Style: DIP Description: VCBO 60Vdc;VEBO 5.0Vdc @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): ¶ I(C) Max. (A): 600m Mounting Style: T h(FE) Min. Current gain.: 75 P(D) Max. (W): 2.4 Number of Devices: 4 -
Quantity: 64
Military/High-Rel: N Number of Devices: 4 Type (NPN/PNP): PNP V(BR)CEO (V): 40 V(BR)CBO (V): 60 I(C) Max. (A): 600m P(D) Max. (W): 2.0 Minimum Operating Temp (øC): -65õ Maximum Operating Temp (øC): 150õ h(FE) Min. Current gain.: 50 @I(C) (A) (Test Condition): 300m @V(CE) (V) (Test Condition): 10 f(T) Min. (Hz) Transition Freq: 200M @I(C) (A) (Test Condition): 50m @V(CE) (V) (Test Condition): 20 Semiconductor Material: Silicon Package Style: TO-116 Mounting Style: T Pulsed Measurement Ä -
Out of stockQuantity: 0
h(FE) Min. Current gain.: 30 @I(C) (A) (Test Condition): 1 Number of Devices: 4 Mounting Style: T @V(CE) (V) (Test Condition): 5 Package Style: TO-116 Military/High-Rel: N Semiconductor Material: Silicon @I(C) (A) (Test Condition): 50 Type (NPN/PNP): NPN @V(CBO) (V) (Test Condition): 40 f(T) Min. (Hz) Transition Freq: 300M V(BR)CEO (V): 36 I(C) Max. (A): 1 Description: 0.75V VCEsat max I(CBO) Max. (A): 1.7u -
Quantity: 41
Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 15 I(C) Max. (A): 50m P(D) Max. (W): 750m Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 125 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 3.0 f(T) Min. (Hz) Transition Freq: 550MÂ Package Style: DIP Mounting Style: T at V(GR) ó 0 å -
Quantity: 680
Maximum Operating Temp (øC): 150õ f(T) Min. (Hz) Transition Freq: 450M Minimum Operating Temp (øC): -65õ @I(C) (A) (Test Condition): 10m Semiconductor Material: Silicon @V(CE) (V) (Test Condition): 1.0 V(BR)CBO (V): 40 Military/High-Rel: N V(BR)CEO (V): 15 @V(CE) (V) (Test Condition): 10 Package Style: TO-116 Emitter-Base Diode (Y/N): No @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): § Type (NPN/PNP): NPN I(C) Max. (A): 500m @V(CBO) (V) (Test Condition): 20 I(CBO) Max. (A): 400n Mounting Style: T h(FE) Min. Current gain.: 40 P(D) Max. (W): 1.5 Number of Devices: 4 -
Quantity: 242
Maximum Operating Temp (øC): 150õ f(T) Min. (Hz) Transition Freq: 200M Minimum Operating Temp (øC): -65õ @I(C) (A) (Test Condition): 50m Semiconductor Material: Silicon @V(CE) (V) (Test Condition): 10 V(BR)CBO (V): 60 Military/High-Rel: N V(BR)CEO (V): 40 @V(CE) (V) (Test Condition): 20 Package Style: TO-116 @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): Ã Type (NPN/PNP): PNP I(C) Max. (A): 600m @V(CBO) (V) (Test Condition): 30 I(CBO) Max. (A): 50n Mounting Style: T h(FE) Min. Current gain.: 35 P(D) Max. (W): 2.0 Number of Devices: 4 -
Quantity: 2547
f(T) Min. (Hz) Transition Freq: 200M @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 30 Package Style: DIP Description: Complementary;VCBO 60V @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): ê I(C) Max. (A): 500m Mounting Style: T h(FE) Min. Current gain.: 75 P(D) Max. (W): 1.2 Number of Devices: 4 -
Out of stockQuantity: 0
Maximum Operating Temp (øC): 85 Minimum Operating Temp (øC): -40 @V(CE) (V) (Test Condition): 3.0 Military/High-Rel: N V(BR)CEO (V): 24 Package Style: SO Description: VBE matched +/-5mV @I(C) (A) (Test Condition): 1.0m I(C) Max. (A): 50m Mounting Style: S h(FE) Min. Current gain.: 40 P(D) Max. (W): 750m Number of Devices: 1 -
Out of stockQuantity: 0
f(T) Min. (Hz) Transition Freq: 600M @V(CE) (V) (Test Condition): 1.0 V(BR)CEO (V): 12 Description: VCBO 15Vdc;VEBO 4.5Vdc @I(C) (A) (Test Condition): 10m I(C) Max. (A): 200m h(FE) Min. Current gain.: 30 Number of Devices: 4 -
Out of stockQuantity: 0tr-27 is on sale at our online store for 6.59065. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Out of stockQuantity: 0
Military/High-Rel: N Number of Devices: 1 V(BR)CEO (V): 24 I(C) Max. (A): 50m P(D) Max. (W): 750m Minimum Operating Temp (øC): -40 Maximum Operating Temp (øC): 85 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 3.0 Package Style: DIP Mounting Style: T — Description: VBE matched +/-5mV -
Out of stockQuantity: 0mpq2907a is on sale at our online store for 8.8297. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Out of stockQuantity: 0MPQ2222A is on sale at our online store for 7.75. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970.
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Quantity: 999
Maximum Operating Temp (øC): 85 Minimum Operating Temp (øC): -40 @V(CE) (V) (Test Condition): 3.0 Military/High-Rel: N V(BR)CEO (V): 30 Package Style: DIP Description: 5 Independent NPN @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): Œ I(C) Max. (A): 100m Mounting Style: T h(FE) Min. Current gain.: 50 P(D) Max. (W): 750m Number of Devices: 5 -
Quantity: 5
Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 15 I(C) Max. (A): 100m P(D) Max. (W): 750m Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 125 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 10m @V(CE) (V) (Test Condition): 3.0 f(T) Min. (Hz) Transition Freq: 450MÂ Package Style: DIP Mounting Style: T Not at Breakdown Voltage ê Description: Burn-in version -
Quantity: 4696
Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 15 I(C) Max. (A): 20m P(D) Max. (W): 425m Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 125 h(FE) Min. Current gain.: 35 @I(C) (A) (Test Condition): 5.0m @V(CE) (V) (Test Condition): 6.0 f(T) Min. (Hz) Transition Freq: 1.1GÂ Package Style: DIP Mounting Style: T V(CE) Ý Description: Typ Noise Figure=3.5dB -
Quantity: 971
Minimum Operating Temp (øC): -40 h(FE) Min. Current gain.: 30 P(D) Max. (W): 750m @I(C) (A) (Test Condition): 1.0m Number of Devices: 5 Mounting Style: S @V(CE) (V) (Test Condition): 5.0 Package Style: SO Military/High-Rel: N f(T) Min. (Hz) Transition Freq: 300M V(BR)CEO (V): 40 I(C) Max. (A): 50m Description: 3 NPN + 1 Diff. Pair Maximum Operating Temp (øC): 85 -
Quantity: 911
Minimum Operating Temp (øC): -40 h(FE) Min. Current gain.: 30 P(D) Max. (W): 750m @I(C) (A) (Test Condition): 1.0m Number of Devices: 5 Emitter-Base Diode (Y/N): ‡ Mounting Style: S @V(CE) (V) (Test Condition): 5.0 Package Style: SO Military/High-Rel: N f(T) Min. (Hz) Transition Freq: 300M V(BR)CEO (V): 30 I(C) Max. (A): 50m Description: 3 NPN + 1 Diff. Pair Maximum Operating Temp (øC): 85