Price: $71.60
Quantity: 1
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Quantity: 63f(T) Min. (Hz) Transition Freq: 200M @V(CE) (V) (Test Condition): 10 Military/High-Rel: N V(BR)CEO (V): 40 Package Style: DIP Description: VCBO 60Vdc;VEBO 5.0Vdc @I(C) (A) (Test Condition): 10m @I(C) (A) (Test Condition): ¶ I(C) Max. (A): 600m Mounting Style: T h(FE) Min. Current gain.: 75 P(D) Max. (W): 2.4 Number of Devices: 4 -
Quantity: 205Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 30 I(C) Max. (A): 50m P(D) Max. (W): 750m Minimum Operating Temp (øC): -40 Maximum Operating Temp (øC): 85 h(FE) Min. Current gain.: 30 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 5.0 f(T) Min. (Hz) Transition Freq: 300M Package Style: DIP Mounting Style: T … Description: 3 NPN + 1 Diff. Pair -
Quantity: 911Minimum Operating Temp (øC): -40 h(FE) Min. Current gain.: 30 P(D) Max. (W): 750m @I(C) (A) (Test Condition): 1.0m Number of Devices: 5 Emitter-Base Diode (Y/N): ‡ Mounting Style: S @V(CE) (V) (Test Condition): 5.0 Package Style: SO Military/High-Rel: N f(T) Min. (Hz) Transition Freq: 300M V(BR)CEO (V): 30 I(C) Max. (A): 50m Description: 3 NPN + 1 Diff. Pair Maximum Operating Temp (øC): 85 -
Quantity: 143Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 30 I(C) Max. (A): 75m P(D) Max. (W): 750m Minimum Operating Temp (øC): -40 Maximum Operating Temp (øC): 85 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 10m @V(CE) (V) (Test Condition): 3.0 Package Style: DIP Mounting Style: T ˆ Description: 5 NPN transistors -
Quantity: 5Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 15 I(C) Max. (A): 100m P(D) Max. (W): 750m Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 125 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 10m @V(CE) (V) (Test Condition): 3.0 f(T) Min. (Hz) Transition Freq: 450MÂ Package Style: DIP Mounting Style: T Not at Breakdown Voltage ê Description: Burn-in version -
Quantity: 131Minimum Operating Temp (øC): -55 h(FE) Min. Current gain.: 40 P(D) Max. (W): 750m @I(C) (A) (Test Condition): 1.0m Number of Devices: 5 Emitter-Base Diode (Y/N): ã Mounting Style: T @V(CE) (V) (Test Condition): 3.0 Package Style: DIP Military/High-Rel: N f(T) Min. (Hz) Transition Freq: 550MÂ V(BR)CEO (V): 15 I(C) Max. (A): 50m Maximum Operating Temp (øC): 125 -
Quantity: 41Military/High-Rel: N Number of Devices: 5 V(BR)CEO (V): 15 I(C) Max. (A): 50m P(D) Max. (W): 750m Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 125 h(FE) Min. Current gain.: 40 @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 3.0 f(T) Min. (Hz) Transition Freq: 550MÂ Package Style: DIP Mounting Style: T at V(GR) ó 0 å

