Price: $20.30
Quantity: 69
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Quantity: 23
Military/High-Rel: N Number of Devices: 4 Type (NPN/PNP): PNP V(BR)CEO (V): 60 V(BR)CBO (V): 60 I(C) Max. (A): 50m P(D) Max. (W): 2.0 Minimum Operating Temp (øC): -65õ Maximum Operating Temp (øC): 150õ I(CBO) Max. (A): 10n @V(CBO) (V) (Test Condition): 50 h(FE) Min. Current gain.: 250 @I(C) (A) (Test Condition): 10m @V(CE) (V) (Test Condition): 5.0 f(T) Min. (Hz) Transition Freq: 60M @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 5.0 Emitter-Base Diode (Y/N): No Semiconductor Material: Silicon Package Style: DIP Mounting Style: T Pulsed Measurement æ -
Out of stockQuantity: 0
h(FE) Min. Current gain.: 400 P(D) Max. (W): 400m Number of Devices: 2 Emitter-Base Diode (Y/N): Ä Mounting Style: T Package Style: SIP Military/High-Rel: N Semiconductor Material: Silicon f(T) Min. (Hz) Transition Freq: 100M V(BR)CEO (V): 50 I(C) Max. (A): 100m Description: Differential Amp