Military/High-Rel: | N |
Number of Devices: | 4 |
Type (NPN/PNP): | PNP |
V(BR)CEO (V): | 60 |
V(BR)CBO (V): | 60 |
I(C) Max. (A): | 50m |
P(D) Max. (W): | 2.0 |
Minimum Operating Temp (øC): | -65õ |
Maximum Operating Temp (øC): | 150õ |
I(CBO) Max. (A): | 10n |
@V(CBO) (V) (Test Condition): | 50 |
h(FE) Min. Current gain.: | 250 |
@I(C) (A) (Test Condition): | 10m |
@V(CE) (V) (Test Condition): | 5.0 |
f(T) Min. (Hz) Transition Freq: | 60M |
@I(C) (A) (Test Condition): | 1.0m |
@V(CE) (V) (Test Condition): | 5.0 |
Emitter-Base Diode (Y/N): | No |
Semiconductor Material: | Silicon |
Package Style: | DIP |
Mounting Style: | T |
Pulsed Measurement | æ |
Price: $7.17
Quantity: 23
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Quantity: 23
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Out of stockQuantity: 0
h(FE) Min. Current gain.: 400 P(D) Max. (W): 400m Number of Devices: 2 Emitter-Base Diode (Y/N): Ä Mounting Style: T Package Style: SIP Military/High-Rel: N Semiconductor Material: Silicon f(T) Min. (Hz) Transition Freq: 100M V(BR)CEO (V): 50 I(C) Max. (A): 100m Description: Differential Amp