h(FE) Min. Current gain.: | 400 |
P(D) Max. (W): | 400m |
Number of Devices: | 2 |
Emitter-Base Diode (Y/N): | Ä |
Mounting Style: | T |
Package Style: | SIP |
Military/High-Rel: | N |
Semiconductor Material: | Silicon |
f(T) Min. (Hz) Transition Freq: | 100M |
V(BR)CEO (V): | 50 |
I(C) Max. (A): | 100m |
Description: | Differential Amp |
Price: $29.00
Quantity: 0
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Out of stockQuantity: 0
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Quantity: 23
Military/High-Rel: N Number of Devices: 4 Type (NPN/PNP): PNP V(BR)CEO (V): 60 V(BR)CBO (V): 60 I(C) Max. (A): 50m P(D) Max. (W): 2.0 Minimum Operating Temp (øC): -65õ Maximum Operating Temp (øC): 150õ I(CBO) Max. (A): 10n @V(CBO) (V) (Test Condition): 50 h(FE) Min. Current gain.: 250 @I(C) (A) (Test Condition): 10m @V(CE) (V) (Test Condition): 5.0 f(T) Min. (Hz) Transition Freq: 60M @I(C) (A) (Test Condition): 1.0m @V(CE) (V) (Test Condition): 5.0 Emitter-Base Diode (Y/N): No Semiconductor Material: Silicon Package Style: DIP Mounting Style: T Pulsed Measurement æ