| V(BR)DSS (V): | 10 |
| V(BR)GSS (V): | -6 |
| I(D) Max. (A): | 80m |
| P(D) Max. (W): | 200m |
| Maximum Operating Temp (øC): | 125õ |
| I(DSS) Min. (A): | 10m |
| I(DSS) Max. (A): | 80m |
| @V(DS) (V) (Test Condition): | 5 |
| @Temp (øC) (Test Condition): | 25 |
| g(fs) Min. (S) Trans. conduct.: | 20m |
| @V(DS) (V) (Test Condition): | 5 |
| @I(D) (A) (Test Condition): | 10m |
| V(GS)off Max. (V): | -5 |
| @V(DS) (V) (Test Condition): | 5 |
| Power Gain Min. (dB): | 21Â |
| @V(DD) (V) (Test Condition): | 5 |
| @I(D) (A) (Test Condition): | 10m |
| @Freq. (Hz) (Test Condition): | 800M |
| Noise Figure Min. (dB): | 1.5Â |
| @V(DS) (V) (Test Condition): | 5 |
| @I(D) (A) (Test Condition): | 10m |
| @Freq. (Hz) (Test Condition): | 800M |
| Semiconductor Material: | GaAs |
Price: $0.55
Quantity: 1
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Quantity: 1 -
Quantity: 96@Temp (øC) (Test Condition): 25 g(fs) Min. (S) Trans. conduct.: 25m @V(DD) (V) (Test Condition): 5.0 P(D) Max. (W): 240m @I(D) (A) (Test Condition): 10m I(D) Max. (A): 80m @Freq. (Hz) (Test Condition): 1.75G @V(DS) (V) (Test Condition): 5.0 @I(D) (A) (Test Condition): 10m I(DSS) Max. (A): 60m V(GS)off Max. (V): 2.5 @Freq. (Hz) (Test Condition): 1.7G I(DSS) Min. (A): 6.0m @I(D) (A) (Test Condition): 10m @V(DS) (V) (Test Condition): 5.0 @V(DS) (V) (Test Condition): 3.0 @V(DS) (V) (Test Condition): 5.0 Power Gain Min. (dB): 17 V(BR)GSS (V): 6.0 V(BR)DSS (V): 10 Semiconductor Material: GaAs Noise Figure Min. (dB): 1.8 Maximum Operating Temp (øC): 150õ -
Quantity: 300
@Temp (øC) (Test Condition): 25 g(fs) Min. (S) Trans. conduct.: 20m @V(DD) (V) (Test Condition): 3.5 P(D) Max. (W): 250m @I(D) (A) (Test Condition): 15m I(D) Max. (A): 80m @Freq. (Hz) (Test Condition): 6.0G @V(DS) (V) (Test Condition): 3.5 @I(D) (A) (Test Condition): 15m I(DSS) Max. (A): 80m V(GS)off Max. (V): 4.0 @Freq. (Hz) (Test Condition): 6.0G I(DSS) Min. (A): 20m @I(D) (A) (Test Condition): 15m @V(DS) (V) (Test Condition): 3.5 g(fs) Max; (S) Trans. conduct;: 30m @V(DS) (V) (Test Condition): 3.5 @V(DS) (V) (Test Condition): 3.5 Operating Power Output Typ.(W): 16ÐÙ Power Gain Min. (dB): 11.2 V(BR)GSS (V): 4.0 V(BR)DSS (V): 5.0 Semiconductor Material: GaAs Noise Figure Min. (dB): 2.0 Maximum Operating Temp (øC): 150õ
