| Military/High-Rel: | N |
| V(BR)DSS (V): | 60 |
| V(BR)GSS (V): | 40 |
| I(D) Max. (A): | 250m |
| Absolute Max. Power Diss. (W): | 1.0 |
| Maximum Operating Temp (øC): | 150õ |
| I(GSS) Max. (A): | 100n |
| r(DS)on Max. (Ohms): | 5.5 |
| g(fs) Min. (S) Trans. conduct.: | 100m |
| g(fs) Max; (S) Trans. conduct;: | 200m |
| @V(DS) (V) (Test Condition): | 15 |
| @I(D) (A) (Test Condition): | 500u |
| Package Style: | TO-237 |
| Mounting Style: | T |
| Current Rise Time | Ç |
Price: $8.80
Quantity: 155
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Quantity: 155 -
Out of stock
Quantity: 0VNS3NV04D13TR is on sale at our online store for 4.2504. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping $150 or more. Also get special discount on International orders. AMS Inc. - Serving semiconductor industry since 1970. -
Quantity: 18
Military/High-Rel: N V(BR)DSS (V): 550 V(BR)GSS (V): 20 I(D) Max. (A): 2.5 IDM Max (@25øC Amb): 6 @Pulse Width (s) (Condition): 300u Absolute Max. Power Diss. (W): 100 Minimum Operating Temp (øC): -55 Maximum Operating Temp (øC): 150 Thermal Resistance Junc-Case: 1.25 Thermal Resistance Junc-Amb.: 30 V(GS)th Max. (V): 4 V(GS)th (V) (Min): 2 @I(D) (A) (Test Condition): 10m I(DSS) Max. (A): 2.0m @V(DS) (V) (Test Condition): 440 @Temp (øC) (Test Condition): 125 I(GSS) Max. (A): 100n @V(GS) (V) (Test Condition): 20 r(DS)on Max. (Ohms): 6.0ò @V(GS) (V) (Test Condition): 10 @I(D) (A) (Test Condition): 500m g(fs) Min. (S) Trans. conduct.: 0.5 g(fs) Max; (S) Trans. conduct;: 1.0Â @V(DS) (V) (Test Condition): 25 @I(D) (A) (Test Condition): 500m C(iss) Max. (F): 650p @V(DS) (V) (Test Condition): 25 @Freq. (Hz) (Test Condition): 1M td(on) Max (s) On time delay: 15n t(r) Max. (s) Rise time: 15n t(d)off Max. (s) Off time: 100n t(f) Max. (s) Fall time.: 25n Package Style: TO-3 Mounting Style: T ID in Amps „ -
Quantity: 50
Military/High-Rel: N V(BR)DSS (V): 240 V(BR)GSS (V): 30 I(D) Max. (A): 200m Absolute Max. Power Diss. (W): 1.0 Maximum Operating Temp (øC): 150õ I(GSS) Max. (A): 100n r(DS)on Max. (Ohms): 10ò g(fs) Min. (S) Trans. conduct.: 300m g(fs) Max; (S) Trans. conduct;: 500m @V(DS) (V) (Test Condition): 10 @I(D) (A) (Test Condition): 500u C(iss) Max. (F): 125p t(r) Max. (s) Rise time: 8.0n t(f) Max. (s) Fall time.: 34n Package Style: TO-237 Mounting Style: T Junction Temperature ô -
Quantity: 1260
g(fs) Min. (S) Trans. conduct.: 100m @I(D) (A) (Test Condition): 100m Mounting Style: T I(D) Max. (A): 250m Package Style: TO-39 Military/High-Rel: N r(DS)on Max. (Ohms): 50ò t(r) Max. (s) Rise time: 5.0n C(iss) Max. (F): 50p @V(DS) (V) (Test Condition): 25 t(f) Max. (s) Fall time.: 5.0n I(GSS) Max. (A): 100n I(GSS) Max. (A): ù Absolute Max. Power Diss. (W): 5¥ V(BR)GSS (V): 300Í V(BR)DSS (V): 300Â Maximum Operating Temp (øC): 150õ -
Quantity: 85
Maximum Operating Temp (øC): 150# Military/High-Rel: N V(BR)DSS (V): 35 g(fs) Max; (S) Trans. conduct;: 250m Absolute Max. Power Diss. (W): 735m g(fs) Min. (S) Trans. conduct.: 170m V(BR)GSS (V): 35Ê C(iss) Max. (F): 40p I(D) Max. (A): 2.0 Package Style: TO-39 Description: Ô Mounting Style: T I(GSS) Max. (A): 100n @I(D) (A) (Test Condition): 500m @V(DS) (V) (Test Condition): 24 -
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